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patent-pending Datasheet PDF File

For patent-pending Found Datasheets File :: 5601 Search Time::0.813ms
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				Motorola, Inc MOTOROLA[Motorola Inc]
Part No.	MC13144 MC13144D
OCR Text	...* The MC13144 uses a unique and patent pending circuit topology. MOTOROLA ANALOG IC DEVICE DATA 3 MC13144 Evaluation PC Board The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range...
Description	VHF - 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS
File Size	131.79K / 8 Page	View it Online	Download Datasheet

				SEMTECH[Semtech Corporation]
Part No.	SC1144 SC1144ABCSW
OCR Text	... (24-Pin SOIC) The SC1144 is patent pending Pentium is a registered trademark of Intel Corporation 1 (c) 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 PROGRAMMABLE, HIGH PERFORMANCE MULTI-PHASE, PWM CONTROLLER...
Description	PROGRAMMABLE/ HIGH PERFORMANCE MULTI-PHASE/ PWM CONTROLLER PROGRAMMABLE, HIGH PERFORMANCE MULTI-PHASE, PWM CONTROLLER
File Size	154.95K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STB3NB60 5982
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	From old datasheet system N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK PowerMESH MOSFET
File Size	90.97K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB5NB60
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET
File Size	92.07K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STB5NB80 6521
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	From old datasheet system N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET
File Size	86.36K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. ST Microelectronics SGS Thomson Microelectronics
Part No.	STB6NB50 STB6NB50-1
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 5.8AI（四）\|62AA N-CHANNEL Power MOSFET N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
File Size	91.62K / 9 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics 意法半导 ST Microelectronics
Part No.	STB6NB90 6439
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET From old datasheet system N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET N-CHANNEL Power MOSFET
File Size	47.53K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STD7NB20 STD7NB20-1
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and s...
Description	N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH?/a> MOSFET N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH MOSFET N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH⑩ MOSFET
File Size	486.60K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STN1NB80
OCR Text	...tstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and sw...
Description	N - CHANNEL 800V - 16 ohm - 0.2A - SOT-223 PowerMESH] MOSFET
File Size	86.14K / 8 Page	View it Online	Download Datasheet

For patent-pending Found Datasheets File :: 5601 Search Time::0.813ms
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