| |
|
 |
Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
IRFS540 IRFS540A
|
| OCR Text |
...or Corporation
IRFS540A
n-channel POWER MOSFET
Electrical Characteristics (TC=25 C unless otherwise specified)
Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drai... |
| Description |
Advanced Power MOSFET
|
| File Size |
257.81K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Sanyo
|
| Part No. |
LC72700G LC72700E
|
| OCR Text |
...ly open. Since the DO pin is an n-channel open-drain output, the time for the data value to change from the low level to the high level depends on the value of the pull-up resistor used.
No. 4870-5/14
LC72700E, LC72700G 4. Serial Cont... |
| Description |
CMOS LSI
|
| File Size |
270.53K /
14 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Hamamatsu Photonics K.K. HAMAMATSU[Hamamatsu Corporation]
|
| Part No. |
S3901 S3901-128Q S3901-256Q S3901-512Q S3904-512Q S3904 S3904-1024Q S3904-256Q
|
| OCR Text |
... scanning circuit is made up of n-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light lev... |
| Description |
NMOS Linear image sensor NMOS管线性图像传感器 (S3901 / S3904) NMOS Linear Image Sensor
|
| File Size |
238.62K /
6 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
SSS6N70A
|
| OCR Text |
...ate-Drain("Miller") Charge
n-channel POWER MOSFET
C
unless otherwise specified)
Min. Typ. Max. Units 700 -2.0 -----------------0.79 ------3.22 100 45 18 23 76 26 51 8.3 23.1 --4.0 100 -100 25 250 1.8 -115 55 45 55 160 60 67 --nC n... |
| Description |
Advanced Power MOSFET
|
| File Size |
356.09K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
| Part No. |
SFP9520 SFP9520NL
|
| OCR Text |
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperatur...CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250A See Fig 7 VDS=-5V,ID=-250A VGS=-20V VGS=20V V... |
| Description |
100V P-Channel A-FET / Substitute of IRF9520 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
|
| File Size |
226.75K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|