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For mostm Found Datasheets File :: 145    Search Time::1.266ms    
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    SPN03N60C3 SPN03N60C305

Infineon Technologies AG
Part No. SPN03N60C3 SPN03N60C305
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances VDS @ Tjmax RDS(on) ID 650 1.4 0.7 SOT-223 4 V A 3 2 1 VPS05163 ...
Description Cool MOS Power Transistor Feature

File Size 376.01K  /  12 Page

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    SPN03N60S5 SPN03N60S505

Infineon Technologies AG
Part No. SPN03N60S5 SPN03N60S505
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance 2 1 VPS05163 VDS RDS(on) ID 600 1.4 0.7 SOT-22...
Description New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated

File Size 303.22K  /  9 Page

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    SPN04N60S5 SPN04N60S505

Infineon Technologies AG
Part No. SPN04N60S5 SPN04N60S505
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in SOT 223 VDS RDS(on) ID 600 0.95 0.8 SOT-223 4 V A * Ultra low gate charge * Extreme dv/dt rated * Ultra low effective ca...
Description New revolutionary high voltage technology Worldwide best RDS in SOT 223

File Size 515.40K  /  10 Page

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    SPP04N60S5 SPP04N60S507

Infineon Technologies AG
Part No. SPP04N60S5 SPP04N60S507
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-1 VDS RDS(on) ...
Description New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

File Size 481.61K  /  11 Page

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    SPP17N80C3 SPP17N80C307

Infineon Technologies AG
Part No. SPP17N80C3 SPP17N80C307
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Worldwide best RDS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transcondu...
Description New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

File Size 577.63K  /  13 Page

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    SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307

Infineon Technologies AG
Part No. SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C307
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance PG-TO262 V DS RDS(on) ID PG...
Description New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated

File Size 556.18K  /  15 Page

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    SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309

Infineon Technologies AG
Part No. SPP11N65C3 SPA11N65C3 SPI11N65C3 SPP11N65C309
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance PG-TO262 V DS RDS(on) ID PG...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology

File Size 567.48K  /  15 Page

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    SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309

Infineon Technologies AG
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Part No. SPA11N60C3E8185 SPP11N60C3 SPI11N60C3 SPP11N60C309
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tj...
Description Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology

File Size 652.57K  /  16 Page

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    SPP02N60S5 SPP02N60S509

Infineon Technologies AG
Part No. SPP02N60S5 SPP02N60S509
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-1 VDS RDS(on) ...
Description
File Size 348.82K  /  10 Page

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    SPP03N60S5 SPP03N60S509

Infineon Technologies AG
Part No. SPP03N60S5 SPP03N60S509
OCR Text mostm Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance P-TO220-3-1 VDS RDS(on) ...
Description
File Size 354.02K  /  10 Page

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