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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS2582
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| OCR Text |
...y Time Reverse Recovered Charge isd = 4.1A isd = 2A isd= 4.1A, disd/dt= 100A/s isd= 4.1A, disd/dt= 100A/s 1.25 1.0 63 116 V V ns nC
Notes: 1: Starting TJ = 25C, L = 56mH, IAS = 3A. 2: RJA is the sum of the junction-to-case and case-to-am... |
| Description |
Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>
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| File Size |
215.08K /
11 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB11NB40T4 STB11NB40 STB11NB40-1
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| OCR Text |
...mited by safe operating area 2. isd 11A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Table 4. Thermal Data
Symbol Rthj-case Rthj-amb Tl Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max Value 1.0 62.5 ... |
| Description |
N-CHANNEL 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
From old datasheet system
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| File Size |
243.88K /
11 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB100NH02LT4 B100NH02L STB100NH02L
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| OCR Text |
...acteristics
Table 5.
Symbol isd isdM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage isd = 30A, VGS = 0 35 35 2 Test conditions Min. Typ. Max. 60 240 1.3 Un... |
| Description |
N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
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| File Size |
382.33K /
13 Page |
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http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
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| Part No. |
STP25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW25NM60N
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| OCR Text |
...ited by safe operating area (2) isd 20 A, di/dt 400 A/s, VDD =80%V(BR)DSS.
Table 4: Thermal Data
TO-220/IPAK TO-247/DPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead T... |
| Description |
From old datasheet system
N-CHANNEL Power MOSFET
N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET N沟道600V.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh
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| File Size |
205.39K /
12 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF76132SK8 HUF76132SK8T
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| OCR Text |
...tage SYMBOL VSD TEST CONDITIONS isd = 11.5A isd = 3.3A Reverse Recovery Time Reverse Recovered Charge trr QRR isd = 3.3A, disd/dt = 100A/s isd = 3.3A, disd/dt = 100A/s MIN TYP MAX 1.25 1.1 58 87 UNITS V V ns nC
Typical Performance Curves... |
| Description |
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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| File Size |
259.00K /
12 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP270N04 B270N04 P270N04 STB270N04 STB270N04-1
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| OCR Text |
...mited by safe operating area 3. isd 120A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj=25C, Id =80A, Vdd=32V
Table 2.
Symbol Rthj-case Rthj-pcb(1) Rthj-a Tl
Thermal data
Value Parameter TO-220/IPAK Thermal resistance juncti... |
| Description |
N-CHANNEL 40V - 2.1m-ohm - 160A - TO-220 - D-2PAK - I-2PAK STripFET-TM Power MOSFET
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| File Size |
249.70K /
14 Page |
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