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CET[Chino-Excel Technology]
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| Part No. |
CED63A3 CEU63A3
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| OCR Text |
...wise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
20
55 150 57 0.45 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and Store Temperature Range
Thermal Characteristics
P... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
391.36K /
4 Page |
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http:// Infineon Technologies AG
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| Part No. |
BSO4822
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| OCR Text |
...-S4095 Marking 4822 VDS RDS(on) ID 30 10 12.7 V m A
Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain c...55A
Zero gate voltage drain current
VDS =30V, VGS =0, Tj =25C VDS =30V, VGS =0, Tj =125C
A 0.... |
| Description |
OptiMOS Small-Signal-Transistor Low Voltage MOSFETs - OptiMOS Small Signal MOSEFT, 30V, SO-8, RDSon = 10mOhm, 12.5A, LL
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| File Size |
99.03K /
8 Page |
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it Online |
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Fairchild Semiconductor
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| Part No. |
HUF76432P3 HUF76432S3S
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....55A rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 40 ID = 37A PULSE DURATION = 80s DUTY CYCLE = 0.5% MA... |
| Description |
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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| File Size |
213.31K /
10 Page |
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it Online |
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Price and Availability
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