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gma Datasheet PDF File

For gma Found Datasheets File :: 438 Search Time::2.172ms
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				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP490
OCR Text	...t 1.8 GHz maxim. available Gain gma = 9.5 dB at 1.8 GHz * Transition frequency fT > 17 GHz * Gold metalization for high reliability * SIEGET (R) 25 - Line Siemens Grounded Emitter Transistor 25 GHz fT - Line BFP 490 4 5 3 2 1 VPW0598...
Description	From old datasheet system NPN Silicon RF Transistor (Q62702-F1721)
File Size	45.64K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	HFD3 HFD3-V
OCR Text	gma _hk IGE93V /[^mp^^g \hbe Zg] \hgmZ\ml0 _ Snk^ pbmalmZg] ohemZ^ ni mh 8;66VBD2 f^^ml GDD PZkm <> Zg] T^e^\hk]bZ _ M^^ml FN<6?;6 5 FN:7669 _ SMT Zg] EJP mri^l ZoZbeZ[e^ _ Cb_nk\Zm^] \hgmZ\ml _ Sbge^ lb]^ lmZ[e^ Zg] eZm\abg mri^ ZoZbeZ[e^ ...
Description	SUBMINIATURE SIGNAL RELAY
File Size	105.30K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP182
OCR Text	... Gms - 1.2 1.9 21.5 - gma - 15 - \|S21e\|2 17 11 - = \|S21 / S12 \| = \|S21 / S12 \| (k-(k2-1)1/2) 3 Aug-09-2001 BFP182 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS...
Description	RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA NPN Silicon RF Transistor
File Size	77.60K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BFP650E6327 BFP650
OCR Text	...scilators Maxim. available Gain gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability 70 GHz fT - Silicon Germanium technology 3 4 Junction temperature Ambient temperature Storage temperat...
Description	NPN Silicon Germanium RF Transistor
File Size	179.20K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFP650
OCR Text	...ilators * Maxim. available Gain gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz * Gold metallization for high reliability * 70 GHz fT- Silicon Germanium technology ESD: Electrostatic discharge sensitive device, observe handling p...
Description	Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA NPN Silicon Germanium RF Transistor
File Size	207.23K / 7 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	BFP460
OCR Text	... 24 GHz 2V 3-4V Power gain gma, Gms , \|S 21\|2 = (f) VCE = 3 V, I C = 20 mA 50 dB 20 18 1V 40 35 30 25 20 15 10 5 mA \|S21\| gma Gms fT 16 14 12 10 8 6 4 0 G 10 20 30 40 60 0 0 1 2 3 4 ...
Description	NPN Silicon RF Transistor
File Size	132.15K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BFR280
OCR Text	... 11 VCB IC Power Gain gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 20 Power Gain gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 13 dB dB 10V 10V 3V 5V 3V 2V 11 16 3V G 14 2V G 12 0.7V 10 9 ...
Description	RF-Bipolar - NPN Silicon RF transistor for low noise, low power amplifiers
File Size	77.16K / 7 Page	View it Online	Download Datasheet

For gma Found Datasheets File :: 438 Search Time::2.172ms
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