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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FMS6G10US60
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| OCR Text |
...BT
0.1
I
C
=5A
Sin gle P uls e (T h er m al R e s p o n s e)
0.01 10
-5 -4 -3 -2 -1 0 1
100
150
C ase T e m p erature, T
[oC ]
10
10
10
10
10
10
Rectangular Pulse Duration [sec]
Figure 5. S... |
| Description |
Compact & Complex Module
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| File Size |
790.05K /
10 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8404SG_06 HE8404SG06
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| OCR Text |
...adiation intensity (%)
An
gle ,
)
Radiation Pattern 0
HE8404SG
Package Dimensions
As of July, 2002
Unit: mm
0.65 0.2 0.55 0.2
(2 - 1.05)
OPJ Code JEDEC JEITA Mass (reference value)
5.4 0.2 4.65 0.2 4.0 0... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
85.72K /
4 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8811_06
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| OCR Text |
...ty (%)
100 80 60 40 20
An gle
60
,
(
90
0 100 80 60 40 20 0 20 40 60 80 Relative radiation intensity (%) Angle, ( )
Rev.0 Oct. 30, 2006 page 2 of 4
HE8811
Package Dimensions
As of July, 2002
Unit: mm
... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
86.43K /
4 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8811
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| OCR Text |
...rn 0 30 TC = 25C
.)
An
gle
80 60 40 20
60
90
0 100 80 60 40 20 0 20 40 60 80 Relative radiation intensity (%) Angle, (deg)
Rev.2, Mar. 2005, page 4 of 6
Relative radiation intensity (%)
,
(d
100
e... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
182.93K /
6 Page |
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OPNEXT[Opnext. Inc.]
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| Part No. |
HE8812SG
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| OCR Text |
...adiation intensity (%)
An
gle
,
)
Radiation Pattern 0
HE8812SG
Package Dimensions
As of July, 2002
Unit: mm
0.65 0.2 0.55 0.2
(2 - 1.05)
OPJ Code JEDEC JEITA Mass (reference value)
5.4 0.2 4.65 0.2 ... |
| Description |
GaAlAs Infrared Emitting Diode
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| File Size |
85.78K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRFY430CM
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| OCR Text |
...DM
0.1
0.05 0.02 0.01 SIN gle PU LSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDMx Z thJC + T C
t1 t2
0.01 0.00001
A
1
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
... |
| Description |
POWER MOSFET N-CHANNEL(BVdss=500V, Rd(on)=1.5ohm, Id=4.5A)
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| File Size |
240.38K /
6 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
Vishay Semiconductors
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| Part No. |
SD603C22S20C SD603C SD603C04S10C SD603C08S10C SD603C10S10C SD603C12S15C SD603C14S15C SD603C16S15C SD603C20S20C
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| OCR Text |
...racteristics
Co n duc tio n An gle
2500 DC 180 120 90 60 30
180 120 90 60 30 RMS Lim it
2000
1500
1000
RMS Lim it
C o ndu ctio n P e rio d
SD603C..C Series TJ = 125C
500
SD603C..C Series TJ = 125C 0 200 400 600 ... |
| Description |
FAST RECOVERY DIODES Hockey Puk Version
DIODE 600 A, 800 V, SILICON, RECTIFIER DIODE, B-43, 2 PIN, Rectifier Diode
FAST RECOVERY DIODES Hockey Puk Version 快速恢复二极管曲棍球北辰版
800V Fast Recovery Diode in a B-43 (E-Puk) package
1000V Fast Recovery Diode in a B-43 (E-Puk) package
1200V Fast Recovery Diode in a B-43 (E-Puk) package
1400V Fast Recovery Diode in a B-43 (E-Puk) package
1600V Fast Recovery Diode in a B-43 (E-Puk) package
2000V Fast Recovery Diode in a B-43 (E-Puk) package
2200V Fast Recovery Diode in a B-43 (E-Puk) package
DIODE 600 A, 2200 V, SILICON, RECTIFIER DIODE, B-43, 2 PIN, Rectifier Diode
DIODE 600 A, 1200 V, SILICON, RECTIFIER DIODE, B-43, 2 PIN, Rectifier Diode
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| File Size |
199.87K /
8 Page |
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ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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| Part No. |
STP80N05-09
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| OCR Text |
...limit ed by Tj max , < 1%) Sin gle Pul se Aval anc he Energy o (starting Tj = 25 C, ID = IAR, VDD = 25 V) Max Value 60 600 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V(BR)DSS IDS S I GSS ... |
| Description |
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY?POWER MOS TRANSISTOR
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| File Size |
113.50K /
9 Page |
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it Online |
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Price and Availability
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