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  gate-pulsed Datasheet PDF File

For gate-pulsed Found Datasheets File :: 41199    Search Time::2.234ms    
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    R5021ANX

Rohm
Part No. R5021ANX
OCR Text ...ce. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 5) Parallel use is easy. ...Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg 3 1 3 1 2 2 Limits 500 30 21 84 21 84...
Description 10V Drive Nch MOSFET

File Size 229.57K  /  6 Page

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    RW1A013ZP

Rohm
Part No. RW1A013ZP
OCR Text ... DIODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain 1 Absolute maximum ratings (Ta=25C) Parameter Drain-source voltag...Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg 1 1 2 Limits -12 10 1.3...
Description 1.5V Drive Pch MOSFET

File Size 200.28K  /  5 Page

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    RW1A020ZP

Rohm
Part No. RW1A020ZP
OCR Text ...IODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gat...Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg 1 1 2 Limits -12 10 2 6...
Description 1.5V Drive Pch MOSFET

File Size 221.38K  /  5 Page

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    RW1E014SN

Rohm
Part No. RW1E014SN
OCR Text ...2 1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute ...Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg Limits 30 20 1.4 2.8 0.5 2...
Description 4V Drive Nch MOSFET

File Size 173.66K  /  5 Page

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    STE180N05

STMicroelectronics
Part No. STE180N05
OCR Text ...Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

File Size 157.28K  /  8 Page

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    2SK4057 2SK4057-ZK-E2-AY

NEC
Part No. 2SK4057 2SK4057-ZK-E2-AY
OCR Text ...n to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse) Note1 VDSS VGSS I...Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG. VGS = 20 0 V 50 TEST CIRCUIT 2...
Description 30 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN
SWITCHING N-CHANNEL POWER MOSFET

File Size 225.21K  /  8 Page

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    STF15NM60ND STI15NM60ND STB15NM60ND STP15NM60ND STW15NM60ND

STMicroelectronics
Part No. STF15NM60ND STI15NM60ND STB15NM60ND STP15NM60ND STW15NM60ND
OCR Text ...ested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities TO-220 TO-220FP ...pulsed) Total dissipation at TC = 25 C Peak diode recovery voltage slope Insulation withstand voltag...
Description N-channel 600 V - 0.27 ヘ - 14 A - FDmesh⑩ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
N-channel 600 V - 0.27 Ω - 14 A - FDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
N-channel 600 V - 0.27 Ω - 14 A - FDmesh?/a> II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247
N-channel 600 V - 0.27 楼? - 14 A - FDmesh垄芒 II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

File Size 574.96K  /  19 Page

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    1011LD110A

Microsemi Corporation
Part No. 1011LD110A
OCR Text ...and Current Drain-Source (VDSS) Gate-Source (VGS, VDS=0) Temperatures Storage Temperature Operating Case Temperature1 +65V +20V -65 to +150C...Pulsed Bias: IDQ-PULSED = 6.5mA (@ 42us ON, 1.6msec) Rev. 0 - Apr. 2007 Microsemi reserves the ri...
Description 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

File Size 109.36K  /  5 Page

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    1011LD110B

Microsemi Corporation
Part No. 1011LD110B
OCR Text ...and Current Drain-Source (VDSS) Gate-Source (VGS, VDS=0) Temperatures Storage Temperature Operating Case Temperature1 +65V +20V -65 to +150C...Pulsed Bias: IDQ-PULSED = 6.5mA (@ 42us ON, 1.6msec) Rev. 0 - Apr. 2007 Microsemi reserves the ri...
Description 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET

File Size 216.12K  /  5 Page

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    ZXMHC6A07N8 ZXMHC6A07N8TC

Diodes Incorporated
Part No. ZXMHC6A07N8 ZXMHC6A07N8TC
OCR Text ...-resistance achievable with low gate drive. P1G P1S/P2S P2G Features * 2 x N + 2 x P channels in a SOIC package P1D/N1D ...Pulsed Drain current @ VGS= 10V; TA=25C (c) (b) (b) (b) (a) (f) Symbol VDSS VGS ID Nchannel ...
Description 60V SO8 Complementary enhancement mode MOSFET H-Bridge

File Size 730.47K  /  11 Page

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For gate-pulsed Found Datasheets File :: 41199    Search Time::2.234ms    
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