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  fet2-16 Datasheet PDF File

For fet2-16 Found Datasheets File :: 137    Search Time::1.359ms    
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    FTD2005

Sanyo Semicon Device
Part No. FTD2005
OCR Text ... -- Ta 1.0 PD(FET1) -- PD(FET2) M ou Allowable Power Dissipation, PD - W 1.0 0.8 nte do 0.8 To na tal ce Di 0.6 ram 0.6 ss ic ip bo 1u 0.4 ati ard on (1 nit ...
Description N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 33.62K  /  4 Page

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    FW111

Sanyo Semicon Device
Part No. FW111
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) -W P D - Ta M nte do na Al...
Description P-Channel Silicon MOSFET Load S/W Applications

File Size 44.46K  /  4 Page

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    Renesas
Part No. TBB1010
OCR Text ...ion are applicable for fet1 and fet2 unit item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6??vi d ...16 20 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? forward transfer admittance |y fs |24...
Description Transistors>Amplifiers/MOSFETs

File Size 85.89K  /  12 Page

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    FW213

Sanyo Semicon Device
Part No. FW213
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power D...
Description    DC-DC Converter Applications

File Size 43.89K  /  4 Page

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    EFC4602 ENA1048

Sanyo Semicon Device
Part No. EFC4602 ENA1048
OCR Text ...sely if you want to measure the FET2 side. No. A1048-3/6 EFC4602 Test Circuit 8 Ciss S2 G2 Coss S2 G2 Capacitance bridge ...16 18 20 VGS -- Qg Source-to-Source Voltage, VSS -- V IT13281 ASO Gate-to-Sourc...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 69.85K  /  6 Page

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    FW113

SANYO[Sanyo Semicon Device]
Part No. FW113
OCR Text ...e Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) Allowable Dissipation, PD - W M P D - Ta Allowable Dissipation, PD(FET 2) - W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 ou nte ...
Description P-Channel Silicon MOS FET S/W Load Applications

File Size 44.38K  /  3 Page

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    MGF7168C 7168CT_N

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7168C 7168CT_N
OCR Text ... Pin FET1 Matching circuits FET2 Pout VD1 VD2 Equivalent circuit of MGF7168C with our test board : MGF7168C(Ceramic package...16 MITSUBISHI ELECTRIC (11/12) Mar.'97 2.14 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> Preliminary...
Description UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 75.54K  /  12 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TPCT4204
OCR Text ...tion. FET1 1 4 2 3 FET2 1 2004-11-09 TPCT4204 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a,3) Symbol Rth (ch-a) Max 76 Unit C/W TENTATIVE Thermal resistance...
Description Field Effect Transistor Silicon N Channel MOS Type

File Size 121.31K  /  4 Page

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For fet2-16 Found Datasheets File :: 137    Search Time::1.359ms    
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