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Renesas
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| Part No. |
TBB1010
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| OCR Text |
...ion are applicable for fet1 and fet2 unit item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6??vi d ...16 20 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 120 k ? forward transfer admittance |y fs |24... |
| Description |
Transistors>Amplifiers/MOSFETs
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| File Size |
85.89K /
12 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCT4204
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| OCR Text |
...tion.
FET1
1 4
2
3
FET2
1
2004-11-09
TPCT4204
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a,3) Symbol Rth (ch-a) Max 76 Unit C/W
TENTATIVE
Thermal resistance... |
| Description |
Field Effect Transistor Silicon N Channel MOS Type
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| File Size |
121.31K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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