80-200v pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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80-200v Datasheet PDF File

For 80-200v Found Datasheets File :: 12611 Search Time::1.875ms
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				FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	1MB30-060
OCR Text	...llector current dc t c =80c i c 80 30 a 1ms t c = 25c i c pulse 192 igbt max. power dissipation p c 180 w operating temperature t j +150 c...200v, 300v, 400v gate-emitter voltage : v ge [v] dynamic input characteristics t j =25c 0 10 2...
Description	Fuji Discrete Package IGBT 48 A, 600 V, N-CHANNEL IGBT, TO-3P
File Size	166.33K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNJ67234 IRHNJ63234
OCR Text	...7 823 1480 Range (m) 112 66 80 @VGS = @VGS = VDS (V) @VGS = @VGS = @VGS = @VGS = 0V 250 250 75 -5V 250 250 75 -10V 250 250...200V VDS = 125V VDS = 50V C, Capacitance (pF) Ciss Coss 12 8 Crss 4 FOR TEST CIRCU...
Description	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
File Size	184.80K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK4194LS
OCR Text	... 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C 120 EAS -- Ta IT14244 Case Temperature, Tc -- C IT14247 Avalanche Energy...
Description	General-Purpose Switching Device Applications
File Size	268.14K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHQ57214SE
OCR Text	...ful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching ...200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 1.9A VDS = 125V VDD...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28)
File Size	175.06K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHYS67234CM IRHYS63234CM
OCR Text	...e last page 12 7.6 48 75 0.6 20 80 12 7.5 5.2 -55 to 150 Pre-Irradiation Units A W W/C V mJ A mJ V/ns o C g 300 (0.063 in. ...200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 12A VDS = 125V VDD ...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
File Size	188.86K / 8 Page	View it Online	Download Datasheet

				MICROSEMI POWER PRODUCTS GROUP MICROSEMI[Microsemi Corporation]
Part No.	APTDF400AK20G
OCR Text	... Typ 39 60 110 800 3360 24 60 80 7.64 176 Max Unit ns ns nC A ns C A IF = 400A VR = 133V di/dt = 800A/s Tj = 125C Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case...
Description	Diode Phase leg Power Module
File Size	212.05K / 4 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZVP1320F
OCR Text	...n-state resistance (1) r ds(on) 80 w v gs =-10v, i d =-50ma forward transconductance (1)(2) g fs 25 ms v ds =-25v, i d =-50ma input capacita...200v 1.0 2.0 3.0 0 v ds= -10v 40 30 20 10 50 60 v gs -gate source voltage (volts) transconduct...
Description	SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
File Size	79.54K / 3 Page	View it Online	Download Datasheet

				Zowie Technology Corporation
Part No.	WSCD315H WSCD320H
OCR Text	...0 v i f(av) a i fsm a t j t stg 80 -55 to +150 -55 to +150 8.3ms single half sine-wave item average forward current symbol conditions unit p...200v zowie (150v~200v/3.0a) wscd315h and wscd320h 2012/06 rev. 1 fig.1 - forward cu...
Description	Schottky Barrier Diode
File Size	56.00K / 2 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	FMMT415 FMMT417 FMMT417TA FMMT417TD
OCR Text	...unction of drive current 040 20 80 100 120 140 160 180 60 0 20 40 60 80 100 120 140 160 180 1. 2. 3. pulse width (ns) 1. >4x10 operations ...200v 100 m a 1ma 10ma 100ma 1a 0 20 40 60 80 100 collector current 175c 25c -55c 100p 1n 10n 100n 1...
Description	SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR
File Size	92.43K / 2 Page	View it Online	Download Datasheet

				International Rectifier IRF
Part No.	IRGP4050
OCR Text	...erature. ( See fig. 13b ) VCC = 80%(VCES ), VGE = 20V, L = 10H, RG = 5.0, (See fig. 13a). Repetitive rating; pulse width limited by maximum ...200V IC = 56A 10000 Cies 1000 Coes 100 Cres 10 0 50 100 150 200 VGE, Gate-to-Emitt...
Description	250V Plasma Display Panel (PDP) IGBT Switch in a TO-247AC package PDP Switch
File Size	280.65K / 8 Page	View it Online	Download Datasheet

For 80-200v Found Datasheets File :: 12611 Search Time::1.875ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |