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ST Microelectronics
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| Part No. |
STBW9NK90Z
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| OCR Text |
...pacitance v gs =0, v ds =0v to 720v 115 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =720v, i d = 8a v gs =10v (see figure 19) 72 14 38 100 nc nc nc symbol parameter test conditions min. typ. max. unit t ... |
| Description |
N-CHANNEL MOSFET
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| File Size |
419.97K /
15 Page |
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it Online |
Download Datasheet
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Fairchild Semiconductor Corporation
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| Part No. |
SSF10N90A
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| OCR Text |
...30v v gs =-30v v ds =900v v ds =720v,t c =125 o c v gs =10v,i d =3.25a * v ds =50v,i d =3.25a v dd =450v,i d =10a, r g =9.6 w see fig 13 v ds =720v,v gs =10v, i d =10a see fig 6 & fig 12 drain-to-source leakage cu... |
| Description |
N-Channel Power MOSFET.5A00V.2ΩN沟道功率MOS场效应管（漏电流6.5A, 漏源电压900V，导通电.2Ω
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| File Size |
239.13K /
7 Page |
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it Online |
Download Datasheet |
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