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  7.00m Datasheet PDF File

For 7.00m Found Datasheets File :: 171    Search Time::1.031ms    
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    AO7600

List of Unclassifed Manufacturers
ETC
Part No. AO7600
OCR Text ...(VGS=-4.5V) < 350m (VGS=2.5V) < 700m (VGS=-2.5V) < 450m (VGS=1.8V) < 950m (VGS=-1.8V) D1 D2 G S1 G S2 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-S...
Description Complementary Enhancement Mode Field Effect Transistor
From old datasheet system

File Size 134.14K  /  7 Page

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    Microsemi
Part No. AAHS298B
OCR Text ...put is capable of sourcing 700m a with a withstand voltage of 75 v over the full military temperature range. the thermal shutdown is intended to protect against over - current and soft - start occurrences. the a...
Description Radiation Tolerant 8-channel Source Driver

File Size 564.25K  /  5 Page

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    H3203

SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD
Part No. H3203
OCR Text ...in 35 v ce =1v , i c =700m a v ce(sat) collector - emitter saturation voltage 0.5 v i c =500ma, i b =20ma v be base - emitter voltage 05 0.8 v v ce =1v, i c =10m a i cbo collector cut - off curren...
Description NPN SILICON TRANSISTOR

File Size 231.11K  /  1 Page

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    ACE632

ACE Technology Co., LTD.
Part No. ACE632
OCR Text ... - 4.5v - 20v/0.8a,r ds(on) = 700m@v gs = - 2.5v - 20v/0.7a,r ds(on) = 950m@v gs = - 1.8v ? super high de nsity cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capabilit y appl...
Description The ACE632 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 947.24K  /  11 Page

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    CHA5056

United Monolithic Semiconductors
Part No. CHA5056
OCR Text ...100 m. rf wire bonding length: 700m max 10nf 10nf 120pf 120pf 120pf 120pf 120pf 120pf 10nf 10nf 10nf to vg1, 2 dc gate supply to vg3 dc gate supply to vd3 dc gate supply to vd1, 2 dc...
Description 17-27GHz High Power Amplifier

File Size 270.36K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FAN1950 FAN1951D25X FAN1950D25X FAN1951 FAN1951D18X
OCR Text ...mic Cout = 10F Tantalum (ESR~700m) Ch1 - Vout (AC, 0.5V/div) Ch2 - Load Current (1A/div.) Cout = 10F Ceramic Ch1 - Vout (AC, 0.5V/div.) Ch2 - Load Current (1A/div.) Vout vs. Temperature 1.834 1.824 1.814 Vout (V) 1.804 1.794 1.784 ...
Description 1.5A Low-Voltage Low-Dropout Regulator
1.5A Low Voltage LDO

File Size 510.92K  /  11 Page

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    AOH3110

Alpha & Omega Semiconductors
Part No. AOH3110
OCR Text ...a r ds(on) (at v gs =10v) < 700m w r ds(on) (at v gs =4.5v) < 820m w symbol v ds parameter absolute maximum ratings t a =25c unless otherwise noted the aoh3110 combines advanced trench mosfet technology with a low resistance packag...
Description 100V N-Channel MOSFET

File Size 256.23K  /  5 Page

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    W47180

Seoul Semiconductor
Part No. W47180
OCR Text ...i t e (t jm ax = 14 5 o c, @700m a ) 0 2 55 07 5 1 0 0 1 2 5 1 5 0 0 50 10 0 15 0 20 0 25 0 30 0 35 0 40 0 rj a t = 6 0 o c/ w r j a t = 50 o c/ w rja t = 40 o c/ w r j a t = 30 o c/ w curr ent [ m a] a m ...
Description Z Power LED

File Size 252.46K  /  17 Page

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