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600v- Datasheet PDF File

For 600v- Found Datasheets File :: 16355 Search Time::1.719ms
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				International Rectifier
Part No.	IRGR2B60KDPBF IRGR2B60KDTRPBF IRGR2B60KDTRRPBF IRGR2B60KDTRLPBF IRGR2B60KDPBF-15
OCR Text	...000 irgr2b60kdtrrpbf v ces = 600v i c = 3.7a, t c = 100c t j(max) = 150c v ce(on) typ. = 1.95v e g n-channel c ? ? insulated gate bipolar transistor with ultra-fast soft recovery diode features ?? low v ce (on) non punch thr...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
File Size	750.99K / 12 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24H09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6 Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = -400A / s Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.45K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM200DU-24F09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	124.22K / 4 Page	View it Online	Download Datasheet

				DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
Part No.	TA32910Q TA32914Q TA329Q TA32912Q
OCR Text	...451 Diode voltage drop, dV/dt = 600V/s (linear to 60% VDRM), VGK = -5V Tj = 125oC, ITM = 100A, tp > 100s, dIR/dt = 30A/s, VR = 1V, dV/dt = 600V/s (linear to 60% VDRM), Gate open. Min. Max. 2.5 30 1 1000 1000 500 7 Units V mA mA V/s A/s A/s ...
Description	Asymmetric Thyristor
File Size	102.19K / 10 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	APTGT50X60T3G
OCR Text	...32 31 10 19 2 25 4 v ces = 600v i c = 50a* @ tc = 80c application ? motor control features ? trench + field stop igbt ? technology - low voltage drop - low tail current - switching frequency up to 20 khz - soft...
Description	3 Phase bridge Trench Field Stop IGBT? Power Module
File Size	266.80K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM150DY-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 150A, VGE = 15V VCC = 600V, IC = 150A VGE = 15V RG = 2.1, Inductive load IE = 150A IE = 150A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	86.99K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to fin, The...
Description	HIGH POWER SWITCHING USE
File Size	49.67K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100TL-24NF09
OCR Text	... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = 15V RG = 3.1, Inductive load IE = 100A IE = 100A, VGE = 0V IGBT part (1/6 module)1 FWDi part (1/6 module)1 Case to heat sink, Thermal compound Applied ...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	97.29K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies AG Infineon Technologies A...
Part No.	SKP10N60A SKP10N60A08
OCR Text	...- Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 * Very soft, fast recovery anti-parallel EmCon diode...
Description	Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	363.09K / 14 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM100E3U-24H09 CM100E3U-24H
OCR Text	...K/W K/W V ns C K/W K/W VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE = 15V RG = 3.1 Resistive load IE = 100A, VGE = 0V IE = 100A die / dt = -200A / s Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, ...
Description	IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
File Size	71.76K / 4 Page	View it Online	Download Datasheet

For 600v- Found Datasheets File :: 16355 Search Time::1.719ms
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