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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9N306AS3ST ISL9N306AP3 ISL9N306AS3STNL
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| OCR Text |
...* rDS(ON) = 0.0085 (Typ), VGS = 4.5V * Qg (Typ) = 30nC, VGS = 5V * Qgd (Typ) = 11nC * CISS (Typ) = 3400pF
Applications
* DC/DC converter...3mH 240 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse R... |
| Description |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFET
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
202.72K /
11 Page |
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it Online |
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IRF[International Rectifier]
International Rectifier, Corp.
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| Part No. |
JANSR2N7498T2 IRHF57230SE
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| OCR Text |
...HANNEL REF:MIL-PRF-19500/706
4#
c
TECHNOLOGY
ID QPL Part Number 7.0A JANSR2N7498T2
International Rectifier's R5 TM technolog...3mH Peak IL = 7.0A, VGS = 12V ISD 7.0A, di/dt 219A/s, VDD 200V, TJ 150C
Pulse width 300 s;... |
| Description |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔（到39
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| File Size |
125.69K /
8 Page |
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it Online |
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Sanken
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| Part No. |
2SC5130
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| OCR Text |
...ternal Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sa...3mH -IB2=0.5A Duty:less than 1%
nk
10
Without Heatsink Natural Cooling
Without Heatsink ... |
| Description |
Silicon NPN Transistor
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| File Size |
29.48K /
2 Page |
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it Online |
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SANKEN[Sanken electric]
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| Part No. |
2SC5130
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| OCR Text |
...ternal Dimensions FM20(TO220F)
4.00.2 10.10.2 4.20.2 2.8 c0.5
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sa...3mH -IB2=0.5A Duty:less than 1%
nk
10
Without Heatsink Natural Cooling
Without Heatsink ... |
| Description |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
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| File Size |
23.19K /
1 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
IRFS240B IRFS240BFP001
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| OCR Text |
..., ID = 250 A VGS = 10 V, ID = 6.4 A VDS = 40 V, ID = 6.4 A
(Note 4)
2.0 ---
-0.145 11.3
4.0 0.18 --
V S
Dynamic Characteris...3mH, IAS = 12.8A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 18A, di/dt 300A/s, VDD BVDSS, Sta... |
| Description |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
681.78K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
ISL9N307AD3ST
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| OCR Text |
... * rDS(ON) = 0.010 (Typ), VGS = 4.5V * Qg (Typ) = 28nC, VGS = 5V * Qgd (Typ) = 10nC * CISS (Typ) = 3000pF
Applications
* DC/DC converter...3mH 220 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse R... |
| Description |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
186.44K /
11 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9N307AS3ST ISL9N307AP3
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| OCR Text |
... * rDS(ON) = 0.010 (Typ), VGS = 4.5V * Qg (Typ) = 28nC, VGS = 5V * Qgd (Typ) = 10nC * CISS (Typ) = 3000pF
DRAIN (FLANGE) SOURCE DRAIN GATE ...3mH 220 s
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse R... |
| Description |
N-Channel Logic Level PWM Optimized UltraFETTrench Power MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
140.32K /
11 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRFP244B IRFP244BFP001
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| OCR Text |
...A VDS = 40 V, ID = 8.0 A
(Note 4)
2.0 ---
-0.22 12.5
4.0 0.28 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacita...3mH, IAS = 16A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 14A, di/dt 300A/s, VDD BVDSS, Start... |
| Description |
250V N-Channel B-FET / Substitute of IRFP244 & IRFP244A
250V N-Channel MOSFET
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| File Size |
685.65K /
8 Page |
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it Online |
Download Datasheet |
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