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  2ma-if Datasheet PDF File

For 2ma-if Found Datasheets File :: 9921    Search Time::1.235ms    
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    K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M561633G-RBF75 K4M561633G-RBG K4M561633G-RBL K4M561633G-RBN K4M561633G-RF

SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M561633G-RBF75 K4M561633G-RBG K4M561633G-RBL K4M561633G-RBN K4M561633G-RF1L K4M561633G-RF75 K4M561633G-RG K4M561633G-RL K4M561633G-RN K4M561633G-RF1H K4M561633G-RL750
OCR Text ....4 10 V V V V V uA 1 2 3 IOH = -2mA IOL = 2mA 4 Symbol VDD Min 2.7 Typ 3.0 Max 3.6 Unit V Note 1 NOTES : 1. Under all conditions VDDQ mus...If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed i...
Description 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

File Size 110.45K  /  12 Page

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    K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233H-F1L K4S643233H-FE K4S643233H-FHE K4S643233H-G K4S643233H-N K4S643233

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S643233H-C K4S643233H-F K4S643233H-F1H K4S643233H-F1L K4S643233H-FE K4S643233H-FHE K4S643233H-G K4S643233H-N K4S643233H K4S643233H-L K4S643233H-HN600 K4S643233H-FG600 K4S643233H-HG1H0 K4S643233H-FE600
OCR Text ... 0.4 10 V V V V V uA 1 2 IOH = -2mA IOL = 2mA 3 Symbol VDD Min 2.7 Typ 3.0 Max 3.6 Unit V Note NOTES : 1. VIH (max) = 5.3V AC.The oversho...If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed i...
Description 2M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
Mobile-SDRAM 移动SDRAM

File Size 138.79K  /  12 Page

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    NTE1604

NTE[NTE Electronics]
Part No. NTE1604
OCR Text .... . . . . . . . . . . . . . . 0.2mA Flow-In Current (Pin6), I6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....IF Output AF Output AFC Mute Input Mute Attenuation Adjust GND Bypass Bypass IF Input .953 (24.1)...
Description Integrated Circuit FM IF System for Car Radio

File Size 26.45K  /  3 Page

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    NJW4100 NJW4100M NJW4100V

New Japan Radio Co., Ltd.
Part No. NJW4100 NJW4100M NJW4100V
OCR Text ... V mV Low Voltage Detection (2mA Charge) Block Charge Current ICHG1 Low Voltage Detection Voltage VLV VS=1V VS: LH 1 2 3 VBAT VBAT ...IF-CHG = ( x VREF (1.24V) / 8) / RCS RF1 + RF2 (at. RF1:114.4k, RF2:9.6k, RCS=0.2) Ver.2005-01-20...
Description Lithium-ion Battery Charger Controller IC with Timer 锂离子电池充电控制IC与定时器
From old datasheet system

File Size 278.38K  /  19 Page

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    NJW4120

New Japan Radio
Part No. NJW4120
OCR Text ... V mV Low Voltage Detection (2mA Charge) Block Charge Current ICHG1 Low Voltage Detection Voltage VLV VS=1V VS: LH 1 2 3 VBAT VBAT ...IF-CHG = (96mV / 8) / RCS (at. RCS=0.2) Ver.2005-03-09 -5- NJW4120 TYPICAL CHARACTERISTICS...
Description Lithium-ion Battery Charger Controller IC with Timer
From old datasheet system

File Size 313.41K  /  20 Page

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    NTE[NTE Electronics]
Part No. NTE3086
OCR Text ...(sat) toff(sat) VCC = 10V, IC = 2mA, RL = 100, Note 1 VCC = 10V, IC = 2mA, RL = 1k, Note 1 RL = 2k, IF = 40mA RL = 2k, IF = 40mA - - - - 2.4 15 5 25 - - - - s s s s BW VCE(sat) CTR V(BR)(I-O) R(I-O) IC = 2mA, IF = 16mA VCE = 10V, IF = 10mA ...
Description Optoisolator Dual NPN Transistor Output

File Size 22.83K  /  3 Page

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    PC810

Sharp Electrionic Component...
Sharp Electrionic Components
Sharp Corporation
Part No. PC810
OCR Text ...V = 0, f = 1MHz VCE = 5V, I C = 2mA, R L = 1k , - 3dB VCE = 2V, I C = 2mA, R L = 1k VCC = 5V, I F = 1mA, R L = 110k MIN. 60 5 x 1010 6 TYP...IF = 1mA VCE = 0.4V Ta = 25C 40 Measurement conditions VCE = 2V IC = 2mA RL = 1k Ta = 25C ...
Description High Speed Under High Load Resistance Photocoupler

File Size 66.52K  /  4 Page

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    SMS44 SMS44G SMS44S

Summit Microelectronics, In...
Summit Microelectronics, Inc.
Part No. SMS44 SMS44G SMS44S
OCR Text ...Q# low voltage output ISINK = 1.2mA, VCC = VRST min. ISINK = 1.2mA, VCC 2.7V ISINK = 1.2mA, VCC = VRST min. ISINK = 200A, VCC = 1.2V RTO1 0...if any one of the four inputs is above 1V. However, for full device operation at least one of the in...
Description Highly Programmble Voltage Supervisory Circuit

File Size 391.45K  /  16 Page

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    K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E
OCR Text ...10 Unit V V V V V uA 1 2 IOH = -2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.6V AC. The overshoot voltage duration is 3ns. 2. VIL (min)...If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed i...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
2M x 8Bit x 4 Banks Synchronous DRAM Data Sheet

File Size 125.55K  /  10 Page

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