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Sanyo
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| Part No. |
2SC3153
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| OCR Text |
...IC=0 VCE=5V, IC=0.4A VCE=5V, IC=2a VCE=10V, IC=0.4A VCB=10V, f=1MHz 10* 8 15 120 MHz pF Conditions Ratings min typ max 10 10 40* Unit A A
* : For the hFE1 of the 2SC3153, specify two ranks or more in principle.
10 K 20 15 L 30 20 M 40
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| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/6A Switching Regulator Applications
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| File Size |
96.84K /
4 Page |
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Sanyo
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| Part No. |
2SC3552
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| OCR Text |
...l VCE(sat) VBE(sat) IC=6A, IB=1.2a IC=6A, IB=1.2a 1100 800 7 800 0.5 3.0 0.3 Conditions Ratings min typ max 2.0 1.5 Unit V V V V V V s s s
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=6A, IB1=-IB2=1.2a, ... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
119.88K /
4 Page |
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it Online |
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JILIN SINO-MICROELECTRONICS CO., LTD.
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| Part No. |
3DD5027 3DD5027-O-Z-N-C
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| OCR Text |
... IC=1.5A, IC=1.5A, VCC=24V IC=0.2a IC=1A IB=0.3A IB=0.3A IC=2a,IB1=-IB2=0.4A
Value(min)
15
100 50 10 50 2 1.5 0.3 3 -
Value(typ) Value(max)
Unit V V V A A A
800 1100 7 10 8 -
V V S S MHz
VCE=10V, IC=0.2a
THE... |
| Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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| File Size |
365.32K /
5 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE56044 NTE56042
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| OCR Text |
...ring, dIT/dt (ITM = 20A, IG = 0.2a, dIG/dt = 0.2a/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...800v may be applied without damage, but the TRIAC may switch to the on-state. The rate-of-rise of cu... |
| Description |
TRIAC, 16A, Sensitive Gate
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| File Size |
20.04K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE56047 NTE56045
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| OCR Text |
...ring, dIT/dt (ITM = 20A, IG = 0.2a, dIG/dt = 0.2a/s) MT2 (+), G (+) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...800v may be applied without damage, but the TRIAC may switch to the on-state. The rate-of-rise of cu... |
| Description |
TRIAC, 16A, Sensitive Gate
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| File Size |
20.40K /
2 Page |
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it Online |
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Sanyo
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| Part No. |
2SC3150
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=0.2a VCE=5V, IC=1A VCE=10V, IC=0.2a VCB=10V, f=1MHz 10* 8 15 60 MHz pF Conditions Ratings min typ max 10 10 40* Unit A A
* : The hFE1 of the 2SC3150 is classified as follows. When specifying the hFE1 rank, s... |
| Description |
NPN Triple Diffused Planar Silicon Transistor
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| File Size |
101.69K /
4 Page |
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it Online |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT1003RKFLL
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| OCR Text |
...250 1000 100 3 5
(VGS = 10V, 2a)
Ohms A nA Volts
1-2004 050-7111 Rev A
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30... |
| Description |
POWER MOS 7 FREDFET
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| File Size |
93.55K /
5 Page |
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it Online |
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