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SEME-LAB[Seme LAB]
TT electronics Semelab Limited
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| Part No. |
BYT08-400-220M
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| OCR Text |
...GE * ISOLATED CASE
0.89 1.14 2.54 BSC 2.65 2.75
TO220 METAL PACKAGE
Common Cathode
1 2 3
1 = A1 Anode 1 2 = K Cathode 3 = A2 Anod...64A/ms dIF / dt = -32A/ms dIF / dt = -64A/ms VCC = 120V dIF / dt = -8A/ms LP = 9mH IF = IF(AV) Tj = ... |
| Description |
DUAL FAST RECOVERY RECTIFIER IN TO220 METAL PACKAGE FOR HI.REL APPLICATIONS
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| File Size |
24.90K /
2 Page |
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STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
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| Part No. |
BYT08P-1000 BYT08 BYT08P BYT-08P-1000
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| OCR Text |
...) Junction-case Parameter Value 2 Unit C/W
October 1999 - Ed: 2A
1/4
BYT 08P-1000
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTIC...64A/s IRM diF/dt = - 32A/s diF/dt = - 64A/s 6 Test Conditions VCC = 200 V IF = 8A Lp 0.05H Tj = 100... |
| Description |
FAST RECOVERY RECTIFIER DIODE
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; Number of Contacts:128; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 快速恢复整流二极管
FAST RECOVERY RECTIFIER DIODE
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| File Size |
45.83K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8860
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| OCR Text |
...erTrench(R) MOSFET
30V, 80A, 2.6m
Features
RDS(ON) = 1.9m (Typ), VGS = 5V, ID = 80A Qg(5) = 89nC (Typ), VGS = 5V Low Miller Charge Low ...64A , VDD = 30V, VGS = 10V. 2: Pulse width = 100s
This product has been designed to meet the extr... |
| Description |
N-Channel Logic Level PowerTrench? MOSFET 30V, 80A, 2.6mOhm
N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 80A, 2.6mOhm
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| File Size |
250.64K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8874 FDB8874NL
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| OCR Text |
...le Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature 121 107 21 Figure 4 105 110 0.73 -5...64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s. 4: FDB8874_NL is lead free product. FDB8874_NL mar... |
| Description |
30V N-Channel PowerTrench MOSFET
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| File Size |
201.84K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP8874_NL FDP8874 FDP8874NL
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| OCR Text |
...le Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25oC Operating and Storage Temperature 114 102 16 Figure 4 105 110 0.73 -5...64A, VDD = 27V, VGS = 10V. 3: Pulse width = 100s. 4: FDP8874_NL is lead free product. FDP8874_NL mar... |
| Description |
30V N-Channel PowerTrench MOSFET
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| File Size |
201.44K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FGL40N120AN_06 FGL40N120AN FGL40N120AN06
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| OCR Text |
...saturation voltage : VCE(sat) = 2.6 V @ IC = 40A * High input impedance
IGBT
Description
October 2006
(R)
Employing NPT technol...64A, VGE = 15V Dynamic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse T... |
| Description |
1200V NPT IGBT
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| File Size |
530.16K /
7 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA58N08
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| OCR Text |
...
(Note 1)
FQA58N08 80 64 45.2 256 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Volt...64A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 57.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = ... |
| Description |
80V N-Channel MOSFET
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| File Size |
619.24K /
8 Page |
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it Online |
Download Datasheet |
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