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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
MGFC45V3642A C453642A
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| OCR Text |
...lly designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
OUTLINE...5 0 . 0 / + 1 . 0
2 . 0 / + 4 . 2
APPLICATION
item 01 : 3.6 - 4.2 GHz band power amplifier it... |
| Description |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应 From old datasheet system
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| File Size |
172.84K /
2 Page |
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it Online |
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Infineon Technologies AG
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| Part No. |
SPD30N03S2L-20
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| OCR Text |
...lanche energy, limited by Tjmax 2) Reverse diode dv/dt
IS=30A, VDS=-V, di/dt=200A/s, Tjmax=175C
Gate source voltage Power dissipation
T...5 100 75 50
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified P... |
| Description |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL OptiMOS Power-Transistor
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| File Size |
261.11K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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