2.4 5.8ghz pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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2.4 5.8ghz Datasheet PDF File

For 2.4 5.8ghz Found Datasheets File :: 1142 Search Time::2.344ms
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				Eudyna Devices Inc
Part No.	FLC057WG
OCR Text	...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000. 3. The operating channel temperature (Tch) should not exceed 145C. ELECTRICAL CHARACTE...
Description	C-Band Power GaAs FET
File Size	86.42K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	...DS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with gate resistance...4 6 8 10 Total Power Dissipation (W) 10 8 6 4 2 Case Temperature (C) Drain-Source Voltag...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
Part No.	FRM5W232BS
OCR Text	2.5Gb/s APD Receiver module in an industry standard mini-DIL package * High Sensitivity: -34 dBm (typ.) * High Differential Electrical Outpu...4.5 0 to VB (Note) 2 Unit C C V V mA Edition 1.1 June 2002 1 FRM5W232BS InGaAs-APD/Pr...
Description	Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
File Size	111.13K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1377 BFP180
OCR Text	...r) at collector currents from 0.2 to 2.5mA fT = 7GHz * F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe han...4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter volt...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) From old datasheet system
File Size	76.23K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TB31356AFL
OCR Text	...mA(PLL1+PLL2+XIN) (Typ.) PLL1 : 2.7mA (PLL1+XIN) (Typ.) PLL2 : 1.1mA (PLL2+XIN) (Typ.) (XIN=0.1mA Typ.) Operating voltage : 2.4 to 3.3V Independent battery save supported Compact leadless package : QON16pin(0.65mm pitch) LPF 12 STB DATA CL...
Description	1.8GHz,600MHz DUAL-PLL FREQUENCY SYNTHESIZER
File Size	294.71K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... ETC INFINEON[Infineon Technologies AG]
Part No.	CFH800
OCR Text	...tions! Pin assignment: 1 = gate 2 = source 3 = drain 4 = source CFH800 ________________________________________________________________________________________________________ * * * ESD: Type Marking Ordering code (tape...
Description	Typical Common Source S - Parameters
File Size	71.94K / 7 Page	View it Online	Download Datasheet

				United Monolithic Semic... UMS[United Monolithic Semiconductors]
Part No.	CHA7010-99 CHA7010-99F_00 CHA7010 CHA7010-99F/00
OCR Text	... 30% Symbol F_op G_lin_1 G_lin_2 G_lin_T RL_in RL_out P_sat_1 P_sat_2 P_sat_T P_1dBc_1 P_1dBc_2 PAE_sat PAE_1dBc Vc Ic Vctr Zctr Top CHA7010 Parameter Operating frequency Linear gain (8.4 to 9.4GHz) Linear gain (9.4 to 10.4GHz) Linea...
Description	X-band GaInP HBT High Power Amplifier
File Size	156.54K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...ollector currents from 0.2mA to 2.5mA * fT = 7GHz F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling pre...4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...FS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collecto...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

				Sanyo Semicon Device Sanyo Electric Co., Ltd.
Part No.	EC3H04C 1224
OCR Text	... (0.6mm) leadless package. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 Specifications Absolute Maximum Ratings at Ta=25C Parame...
Description	NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier and OSC Applications From old datasheet system High-Frequency Low-Noise Amplifier and OSC Applications 高频低噪声放大器和OSC应用
File Size	33.74K / 6 Page	View it Online	Download Datasheet

For 2.4 5.8ghz Found Datasheets File :: 1142 Search Time::2.344ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |