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1200v s Datasheet PDF File

For 1200v s Found Datasheets File :: 3695 Search Time::1.157ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	PM75RsE120
OCR Text	...overy characteristics. * 3 75A, 1200v Current-sense IGBT for 15kHz switching * 25A, 1200v Current-sense regenerative brake IGBT * Monolithic...s (Fig. 3) Tj = 25C Tj = 125C mA sep. 2001 MITsUBIsHI <INTELLIGENT POWER MODULEs> PM7...
Description	INTELLIGENT POWER MODULEs
File Size	128.42K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	sTTA806G-TR sTTA806DIRG sTTA806DI sTTA806 sTTA806D sTTA806G
OCR Text	...ltage power diodes from 600V to 1200v. TURBOsWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MO...s, < 2% ** tp = 5 ms, < 2% Test conditions IF =8A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C ...
Description	TURBOsWITCH - ULTRA-FAsT HIGH VOLTAGE DIODE TURBOsWITCH - ULTRA-FAsT HIGH VOLTAGE DIODE TURBOsWITCH ULTRA-FAsT HIGH VOLTAGE DIODE
File Size	263.23K / 9 Page	View it Online	Download Datasheet

				STMicro
Part No.	sTTA806G sTTA806DI sTTA806D 3177
OCR Text	...ltage power diodes from 600V to 1200v. TURBOsWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MO...s, < 2% ** tp = 5 ms, < 2% Test conditions IF =8A VR =0.8 x VRRM Ip < 3.IAV Tj = 25C Tj = 125C ...
Description	TURBOsWITCH TM ULTRA-FAsT HIGH VOLTAGE DIODE From old datasheet system
File Size	87.64K / 9 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BsM35GB120DN2 035B12N2 C67070-A2111-A70
OCR Text	...dering Code C67070-A2111-A70 1200v 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 35 TC =...s nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 M...
Description	PTsE 25C 25#16 sKT RECP From old datasheet system IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area)
File Size	110.29K / 9 Page	View it Online	Download Datasheet

				TE Connectivity, Ltd. SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BsM35GD120D2 035D12D2 C67076-A2506-A17
OCR Text	...dering Code C67076-A2506-A17 1200v 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 35 TC =...s nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 M...
Description	IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管 From old datasheet system
File Size	137.33K / 9 Page	View it Online	Download Datasheet

				Infineon
Part No.	BsM35GD120DN2 035D12N2
OCR Text	...6-A2506-A67 C67070-A2506-A67 1200v 50A 1200v 50A VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 50 ...s nF - VCE = 20 V, IC = 35 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 M...
Description	IGBT Power Module From old datasheet system
File Size	123.80K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	CM200DY-24 CM200DY-24H
OCR Text	...le below -i.e. CM200DY-24H is a 1200v (VCEs), 200 Ampere Dual IGBT Module. Type CM Current Rating Amperes 200 VCEs Volts (x 50) 24 M ...s IE = 200A, diE/dt = -400A/s VCC = 600V, IC = 200A, VGE1 = VGE2 = 15V, RG = 1.6 VGE = 0V, VCE = 10V...
Description	IGBT Modules:1200v HIGH POWER sWITCHING UsE INsULATED TYPE
File Size	49.09K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FGA25N120ANTD
OCR Text	1200v NPT Trench IGBT August 2005 FGA25N120ANTD 1200v NPT Trench IGBT Features * NPT Trench Technology, Positive temperature coeffi...s proprietary trench design and advanced NPT technology, the 1200v NPT IGBT offers superior conducti...
Description	1200v NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology 1200v NPT Trench IGBT
File Size	863.48K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IR2213s
OCR Text	...operation Fully operational to +1200v Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V Undervoltag...s) is a high voltage, high speed power MOsFET and IGBT driver with independent high and low side ref...
Description	HIGH POWER RECTIFIER DIODEs
File Size	134.59K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4PH40UD IRG4PH40UD-E
OCR Text	...UltraFast CoPack IGBT VCEs = 1200v G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A n-ch an nel Benefits * Higher switching freq...s . Minimized recovery characteristics require less/no snubbing TO-247AC Absolute Maximum Rating...
Description	41 A, 1200 V, N-CHANNEL IGBT, TO-247AD INsULATED GATE BIPOLAR TRANsIsTOR WITH ULTRAFAsT sOFT RECOVERY DIODE(Vces=1200v, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极型晶体管，超快软恢复二极管（VCEs和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条） INsULATED GATE BIPOLAR TRANsIsTOR WITH ULTRAFAsT sOFT RECOVERY DIODE(Vces=1200v Vce(on)typ.=2.43V @Vge=15V Ic=21A) 1200v UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
File Size	217.13K / 10 Page	View it Online	Download Datasheet

For 1200v s Found Datasheets File :: 3695 Search Time::1.157ms
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