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  100nh Datasheet PDF File

For 100nh Found Datasheets File :: 559    Search Time::2.031ms    
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    RF2629

RF Micro Devices
Part No. RF2629
OCR Text ... C7 10 nF 8 7 6 5 R2 510 L3 100nh C6 10 nF C9 33 pF R3 510 L4 100nh C10 10 nF VCC IF AMPLIERS C8 33 pF C11 22 pF T2 1 50 strip OUT J2 SMA GC P1 P1-1 1 2 P1-3 3 VCC GND GC R1 3.3 k C5 1 nF C12 22 pF VCC 10-4...
Description 3V CDMA/FM TRANSMIT AGC AMPLIFIER

File Size 102.49K  /  6 Page

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    DIM800DDM12 DIM800DDM12-A000

Dynex Semiconductor
Part No. DIM800DDM12 DIM800DDM12-A000
OCR Text ...600V RG(ON) = RG(OFF) = 2.7 L ~ 100nh Min. Typ. 1250 170 130 250 250 80 9.0 80 380 30 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay t...
Description 1200V dual switch IGBT module
Dual Switch IGBT Module Preliminary Information

File Size 171.12K  /  10 Page

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    DIM800DDM17-A000

Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
Part No. DIM800DDM17-A000
OCR Text ...900V RG(ON) = RG(OFF) = 2.2 L ~ 100nh Min. Typ. 1250 170 230 250 250 220 9.0 200 460 130 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off dela...
Description Dual Switch IGBT Module 800 A, 1700 V, N-CHANNEL IGBT

File Size 144.17K  /  10 Page

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    Q67040S4726 IGW75N60T

INFINEON[Infineon Technologies AG]
Part No. Q67040S4726 IGW75N60T
OCR Text ...E = 0/ 1 5V , R G = 5, L 2 ) = 100nh, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. ns Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off ...
Description 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology

File Size 365.66K  /  12 Page

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    DIM200MHS17-A000

http://
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. DIM200MHS17-A000
OCR Text ...900V RG(ON) = RG(OFF) = 4.7 L ~ 100nh Min. Typ. 590 300 40 320 90 50 65 195 42 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fal...
Description Half Bridge IGBT Module

File Size 146.53K  /  10 Page

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    DIM200PKM33-A000

Dynex Semiconductor
Part No. DIM200PKM33-A000
OCR Text ...N) = RG(OFF) =10 Cge = 33nF L ~ 100nh Min. Typ. 1300 200 170 640 250 290 6 115 165 130 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay ...
Description IGBT Chopper Module

File Size 128.44K  /  6 Page

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    DIM200PLM33-A000

Dynex Semiconductor
Part No. DIM200PLM33-A000
OCR Text ...N) = RG(OFF) =10 Cge = 33nF L ~ 100nh Min. Typ. 1300 200 170 640 250 290 6 115 165 130 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay ...
Description IGBT Chopper Module

File Size 139.64K  /  6 Page

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    DIM200PLM33-F000

Dynex Semiconductor
Part No. DIM200PLM33-F000
OCR Text ...800V RG(ON) = RG(OFF) = 16.5 L 100nh Cge = 56nF RG(ON) = 7.5 IF = 200A, VR = 1800V, dlF/dt = 1600A/s Diode arm Min. Typ. 1950 170 220 1180 225 5 290 80 144 75 Max. Units ns ns mJ ns ns C mJ C A mJ Tcase = 125 C unless stated otherwise. ...
Description IGBT Chopper Module

File Size 231.11K  /  9 Page

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For 100nh Found Datasheets File :: 559    Search Time::2.031ms    
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