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  1.1mh Datasheet PDF File

For 1.1mh Found Datasheets File :: 2981    Search Time::1.25ms    
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    Philips
Part No. BU508DF
OCR Text ...e CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 34 1.0 2.0 UNIT V V A A W V A V s Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz I...1mH D.U.T. IBend LB 12nF VCE t -VBB Fig.1. Switching times waveforms. Fig.3. Switchin...
Description Silicon Diffused Power Transistor

File Size 41.47K  /  7 Page

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    Philips
Part No. BU508DW
OCR Text ...e CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 125 1.0 2.0 UNIT V V A A W V A V s Tmb 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz ...1mH D.U.T. IBend LB 12nF VCE t -VBB Fig.1. Switching times waveforms. Fig.3. Switchin...
Description Silicon Diffused Power Transistor

File Size 54.11K  /  7 Page

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    IRFS150A

Fairchild Semiconductor
Part No. IRFS150A
OCR Text ...n) = 0.04 ID = 31 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD ...1mH, I AS=31A, VDD=25V, RG=27 , Starting T J =25 oCo 3 _ _ _ O ISD < 40A, di/dt < 470A/ s, VDD< BVD...
Description TRANSISTOR|MOSFET|N-CHANNEL|100VV(BR)DSS|31AI(D)|TO-247VAR
Advanced Power MOSFET

File Size 258.02K  /  7 Page

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    Linear
Part No. LTC1473L 1473LI
OCR Text ...2 DIODE TIMER V + BAT54C 1 2 3 4 5 6 GA1 SAB1 GB1 16 15 14 RSENSE 0.04 CTIMER 4700pF + 1F + 1F 1mH VGG SW GND 7 8 13 SENSE + 12 SENSE - 11 GA2 10 SAB2 9 GB2 BAT1 4 NiMH Si4936DY Information furni...
Description Dual Low Voltage PowerPath TM Switch Driver
From old datasheet system

File Size 322.71K  /  16 Page

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    Matsshita / Panasonic
Part No. 2SK3042
OCR Text ...g power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 s Absolute Maximum Ratings (TC = 25C) Pa...1mH, IL = 8A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Sour...
Description Power F-MOS FETs

File Size 51.23K  /  4 Page

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    Matsshita / Panasonic
Part No. 2SK3044
OCR Text ...power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 s Absolute Maximum Ratings (T...1mH, IL = 8A, VDD = 50V, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Sour...
Description Power F-MOS FETs

File Size 53.55K  /  4 Page

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    FDS8880

Fairchild Semiconductor
Part No. FDS8880
OCR Text ... Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 (c)2005 Fairchild Semiconductor Corporation FDS8880 Rev. A1 1 www....1mH, IAS = 12.8A, VDD = 30V, VGS = 10V. 2: RJA is the sum of the junction-to-case and case-to-ambien...
Description N-Channel PowerTrench MOSFET

File Size 195.27K  /  12 Page

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    AO4406

Alpha Industries
Part No. AO4406
OCR Text ...mum 30 12 11.5 9.6 80 25 78 3 2.1 -55 to 150 Units V V A A mJ W C VGS TA=25C TA=70C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25C TA=70C Junction and Storage Temperature Range Th...
Description N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 166.40K  /  7 Page

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    AO4408 AO4408L

Alpha Industries Inc
Part No. AO4408 AO4408L
OCR Text ...ximum 30 12 12 10 80 30 100 3 2.1 -55 to 150 Units V V A A mJ W C VGS TA=25C TA=70C ID IDM IAV B,E Avalanche Current B,E Repetitive Avalanche Energy Power Dissipation L=0.1mH TA=25C TA=70C Junction and Storage Temperature Range Th...
Description N-Channel Enhancement Mode Field Effect Transistor
From old datasheet system

File Size 117.72K  /  5 Page

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    BU508DX

PHILIPS[Philips Semiconductors]
Part No. BU508DX
OCR Text ...e CONDITIONS VBE = 0 V TYP. 4.5 1.6 0.7 MAX. 1500 700 8 15 45 1.0 2.0 UNIT V V A A W V A V s Ths 25 C IC = 4.5 A; IB = 1.6 A f = 16kHz I...1mH D.U.T. IBend LB 12nF VCE t -VBB Fig.1. Switching times waveforms. Fig.3. Switchin...
Description Silicon Diffused Power Transistor

File Size 56.77K  /  7 Page

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For 1.1mh Found Datasheets File :: 2981    Search Time::1.25ms    
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