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  0.468 Datasheet PDF File

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    MC33267 MC33267D2T MC33267T MC33267TV ON1004

Motorola
ONSEMI[ON Semiconductor]
Part No. MC33267 MC33267D2T MC33267T MC33267TV ON1004
OCR Text 0 V regulator that is specifically designed to maintain proper voltage regulation with an extremely low input-to-output voltage differential...468 0.505 --- 0.735 0.090 0.110 MILLIMETERS MIN MAX 14.529 15.570 9.906 10.541 4.318 4.572 0.635 0.9...
Description LOW DROPOUT REGULATOR with POWER-UP RESET
From old datasheet system

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    RC4157 RC4156 RC4156M RC4156N RC4157M RC4157N

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. RC4157 RC4156 RC4156M RC4156N RC4157M RC4157N
OCR Text ...-Input (C) Output (C) REV. 1.0.1 6/13/01 PRODUCT SPECIFICATION RC4156/RC4157 Absolute Maximum Ratings (beyond which the device ...468 70 150 125 300 260 mW mW C C C C C mW/C mW/C Min Typ Max 20 15 30 Units V V V Notes: 1. Funct...
Description High Performance Quad Operational Amplifiers

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    SC1164 SC1164CSW SC1165CSW SC1165

SEMTECH[Semtech Corporation]
Part No. SC1164 SC1164CSW SC1165CSW SC1165
OCR Text ...CSW SO-24 SO-24 1.5V/2.5V 0 to 125C Adj. 0 to 125C Note: (1) Add suffix `TR' for tape and reel. PIN CONFIGURATION BLOCK DIAGR...468 3.570 UNITS 4 (c) 1999 SEMTECH CORP. 652 MITCHELL ROAD NEWBURY PARK CA 91320 12V Oct...
Description PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER/ DUAL LOW DROPOUT REGULATOR CONTROLLER
PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER, DUAL LOW DROPOUT REGULATOR CONTROLLER
IC,SMPS CONTROLLER,VOLTAGE-MODE,BIPOLAR,SOP,24PIN,PLASTIC

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    SGM2014AN SGM2014

SONY[Sony Corporation]
Part No. SGM2014AN SGM2014
OCR Text ...ure Associated gain 13 17 0.9 25 1.5 2 50 2.5 ms pF fF dB dB 15 18 Typical Characteristics (Ta = 25C) ID vs. VDS 40 (VG2...468 1.454 1.440 1.422 1.412 1.399 1.387 1.366 1.349 1.333 1.316 1.298 S21 ANG 175.1 170.2 165.4 160....
Description GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET

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    SGM2014 SGM2014AM

SONY[Sony Corporation]
Part No. SGM2014 SGM2014AM
OCR Text ...ure Associated gain 13 17 0.9 25 1.5 2 50 2.5 ms pF fF dB dB 15 18 Typical Characteristics (Ta = 25C) ID vs. VDS 40 (VG2...468 1.454 1.440 1.422 1.412 1.399 1.387 1.366 1.349 1.333 1.316 1.298 S21 ANG 175.1 170.2 165.4 160....
Description GaAs N-channel Dual Gate MES FET
GaAs N-channel Dual Gate MES FET

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    UPA808 UPA808T UPA808T-T1

NEC[NEC]
Part No. UPA808 UPA808T UPA808T-T1
OCR Text ...erforation side of the tape. 0.65 2 PA808T PA808T-T1 0.65 3 0.90.1 pcs.) ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAM...468 2.364 2.274 S21 ANG 164.5 154.3 144.7 136.0 129.3 122.1 115.3 109.8 104.7 100.0 95.9 91.7 88.4 8...
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

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    HM53-10111H HM53-10111V HM53-10180H HM53-10180V HM53-10320H HM53-10320V HM53-10351H HM53-10351V HM53-10531H HM53-10531V

List of Unclassifed Man...
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
BI Technologies
List of Unclassifed Manufac...
Part No. HM53-10111H HM53-10111V HM53-10180H HM53-10180V HM53-10320H HM53-10320V HM53-10351H HM53-10351V HM53-10531H HM53-10531V HM53-10650H HM53-10650V HM53-30181V HM53-20171H HM53-20171V HM53-40710H HM53-407R0H HM53-407R0V HM53-40710V HM53-30150V HM53-40150V HM53-50150V HM53-005R5V HM53-30101V HM53-30101H HM53-20521H HM53-20580V HM53-20580H HM53-20521V HM53-30690H HM53-30690V HM53-30580V HM53-30580H HM53-607R0V HM53 HM53-001R1H HM53-001R1V HM53-001R6H HM53-001R6V HM53-001R8H HM53-001R8V HM53-001R9H HM53-001R9V HM53-002R0H HM53-002R0V HM53-003R0H HM53-003R0V HM53-005R5H HM53-007R8H HM53-007R8V HM53-009R5H HM53-009R5V HM53-10171H HM53-10171V HM53-10701H HM53-10701V HM53-108R0H HM53-108R0V HM53-20101H HM53-20190H HM53-20190V HM53-20350H HM53-20350V HM53-20351H HM53-20351V HM53-20710H HM53-20710V HM53-208R0H HM53-208R0V HM53-30150H HM53-30181H HM53-30350H HM53-30350V HM53-306R8H HM53-306R8V HM53-40111H HM53-40111V HM53-40150H HM53-40360H HM53-40360V HM53-40550H HM53-40550V HM53-50150H HM53-50370H HM53-50370V HM53-50550H HM53-50550V HM53-50700H HM53-50700V HM53-507R0H HM53-507R0V HM53-60130H HM53-60130V HM53-60350H HM53-60350V HM53-607R0H HM53-20101V
OCR Text ... 13.5 151.7 250.9 25.3 50.3 505.0 754.4 104.0 1000.4 10.1 148.0 251.1 25.0 50.0 499.4 749.3 73.9 101.7 101.7 10.6 Rated (2) Inductance H ...468.1 108.6 679.4 10.5 70.5 96.0 20.3 29.1 136.4 225.4 59.9 48.5 48.5 8.3 ETop(3) V-S Max. 14 10 ...
Description ER 13C 3#8 3#12 7#16 SKT RECP 高功率低成本的电感器
ER 19C 19#16 SKT RECP 高功率低成本的电感器
TV 8C 8#8(TWIN) PIN WALL RECP 高功率低成本的电感器
Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:14; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
Circular Connector; MIL SPEC:MIL-C-5015 E/F/R; Body Material:Metal; Series:SM3102; No. of Contacts:9; Connector Shell Size:24; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle; Body Style:Straight
High Power Low Cost Inductors

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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text ...VCC Tstg PD IOS Address Rating -0.5 to +6.5 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text ...VCC Tstg PD IOS Address Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

File Size 842.92K  /  35 Page

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    MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD-T MAX6744 MAX6744XKD-T MAX6745XKD-T MAX6736 MAX6736XKD-T MAX6737XKD-T

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
http://
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
Part No. MAX6740XKD-T MAX6741XKD-T MAX6742XKD-T MAX6743XKD-T MAX6744 MAX6744XKD-T MAX6745XKD-T MAX6736 MAX6736XKD-T MAX6737XKD-T MAX6738XKD-T MAX6739XKD-T MAX6737 MAX6738 MAX6736XKL MAX6736XKM MAX6736XKR MAX6736XKS MAX6736XKT MAX6736XKV MAX6736XKW MAX6736XKY MAX6736XKZ MAX6737XKL MAX6737XKM MAX6737XKR MAX6737XKS MAX6737XKT MAX6737XKV MAX6737XKW MAX6737XKY MAX6737XKZ MAX6740XKL MAX6740XKM MAX6740XKR MAX6740XKS MAX6740XKT MAX6740XKV MAX6740XKW MAX6740XKY MAX6740XKZ MAX6745XKZD7-T MAX6738XKLD3-T MAX6738XKLD7-T MAX6738XKMD3-T MAX6738XKMD7-T MAX6738XKRD3-T MAX6738XKRD7-T MAX6738XKSD3-T MAX6738XKSD7-T MAX6738XKTD3-T MAX6738XKTD7-T MAX6738XKVD3-T MAX6738XKVD7-T MAX6738XKWD3-T MAX6738XKWD7-T MAX6738XKYD3-T MAX6738XKYD7-T MAX6738XKZD3-T MAX6738XKZD7-T MAX6739XKLD3-T MAX6739XKLD7-T MAX6739XKMD3-T MAX6739XKMD7-T MAX6739XKRD3-T MAX6739XKRD7-T MAX6739XKSD3-T MAX6739XKSD7-T MAX6739XKTD3-T MAX6739XKTD7-T MAX6739XKVD3-T MAX6739XKVD7-T MAX6739XKWD3-T MAX6739XKWD7-T MAX6741XKR MAX6741XKS MAX6741XKT MAX6741XKV MAX6741XKW MAX6741XKY MAX6741XKZ MAX6742XKLD3-T MAX6742XKLD7-T MAX6742XKMD3-T MAX6742XKMD7-T MAX6742XKRD3-T MAX6742XKRD7-T MAX6742XKSD3-T MAX6742XKSD7-T MAX6742XKTD3-T MAX6742XKTD7-T MAX6742XKVD3-T MAX6
OCR Text ...ore supply voltages (VCC2) from 0.9V to 3.3V with factory-trimmed reset threshold voltage options (Table 1). An external adjustable RSTIN in...468 -10 0.5 0.3 0.3 0.3 0.4 0.8 x VCC 0.8 x VCC V 0.488 0.788 0.833 1.050 1.110 1.313 1.388 1.575 1....
Description Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 ?P Supervisory Circuits
(MAX6736 - MAX6745) Low-Power Dual-/Triple-Voltage SC70 UP Supervisory Circuits
Low-Power Dual-/Triple-Voltage SC70 &#181;P Supervisory Circuits 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit
Vcc1: 4.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit

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