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MICROSEMI[Microsemi Corporation]
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| Part No. |
1N60A
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| OCR Text |
Gold Bonded
1N60A
Germanium Diodes
Optimized for Radio Frequency Response
Can be used in many AM, FM and TV-IF applications, replacing point contact devices.
Applications
AM/FM detectors Ratio detectors FM discriminators TV au... |
| Description |
Germanium Diode
Optimized for Radio Frequency Response
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| File Size |
55.60K /
1 Page |
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UTC[Unisonic Technologies]
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| Part No. |
1N60A
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| OCR Text |
UNISONIC TECHNOLOGIES CO., LTD 1N60A
0.5 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resis... |
| Description |
0.5 Amps, 600 Volts N-CHANNEL MOSFET
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| File Size |
136.48K /
8 Page |
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it Online |
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FORMOSA[Formosa MS]
美丽微半导体有限公司
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| Part No. |
1N60P 1N60
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| OCR Text |
FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absol... |
| Description |
Schottky Barrier Diode
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| File Size |
77.61K /
2 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
1N6100
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| OCR Text |
1N6100
A Microsemi Company
580 Pleasant St. Watertown, MA 02472
Phone: 617-924-9280 Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY
FEATURES:
* * * *
HERMETIC CERAMIC PACKAGE Bv > 75V at ... |
| Description |
MONOLITHIC AIR ISOLATED DIODE ARRAY
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| File Size |
19.03K /
1 Page |
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SENSITRON[Sensitron]
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| Part No. |
1N6102A 1N6102
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| OCR Text |
SENSITRON _____ SEMICONDUCTOR
TECHNICAL DATA DATA SHEET 285, REV -
1N6102 1N6102A
TRANSIENT VOLTAGE SUPPRESSOR DIODE
(500 Watt) DESCRIPTION: 5.2 VOLT, 175 MILLIAMP, AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR DIODE. MAX. RATINGS / ELECT... |
| Description |
TRANSIENT VOLTAGE SUPPRESSOR DIODE (500WATT)
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| File Size |
34.52K /
2 Page |
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DIODES[Diodes Incorporated]
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| Part No. |
1N6263W_ 1N6263W 1N6263W-7-F
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| OCR Text |
SPICE MODEL: 1N6263W
1N6263W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
* * * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance Surface Mount Package Ideal... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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| File Size |
208.95K /
3 Page |
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Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
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| Part No. |
1N6263
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| OCR Text |
1N6263
SCHOTTKY BARRIER SWITCHING DIODE Features
* * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Fast Switching Time Low Reverse Capacitance
A
B
A
Mechanical Data
* * * * * Case: DO-35, Glass L... |
| Description |
SCHOTTKY BARRIER SWITCHING DIODE 0.015 A, 60 V, SILICON, SIGNAL DIODE, DO-35
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| File Size |
48.02K /
2 Page |
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it Online |
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Price and Availability
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