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0.0109 Datasheet PDF File

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				Hitachi Semiconductor
Part No.	2SK2931
OCR Text	...ures * Low on-resistance R DS =0.010 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline TO-220AB D G 1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SK2931 Absolute Maximum Ratings (...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	51.52K / 10 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2933
OCR Text	... * Low on-resistance R DS(on) = 0.040 typ. * 4V gate drive devices. * High speed switching Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SK2933 Absolute Maximum Ratings (Ta = 25C) Item Drain to source volta...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	50.49K / 10 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2935
OCR Text	...ures * Low on-resistance R DS =0.020 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SK2935 Absolute Maximum Ratings (Ta = 25C)...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	50.62K / 10 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2937
OCR Text	...ures * Low on-resistance R DS =0.026 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. Source 3 2SK2937 Absolute Maximum Ratings (Ta = 25C)...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	50.80K / 10 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK2938 2SK2938L 2SK2938S
OCR Text	...ures * Low on-resistance R DS =0.026 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2938(L),2SK2...
Description	Silicon N Channel MOS FET/ High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET, High Speed Power Switching
File Size	54.19K / 10 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK3101 2SK3101LS
OCR Text	...nditions Ratings 400 30 11 44 2.0 40 150 --55 to +150 69.1 11 Unit V V A A W W C C mJ A 1 VDD=50V, L=1mH, IAV=11A 2 L1mH, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Volta...
Description	High Output MOSFETs General-Purpose Switching Device Applications
File Size	41.15K / 5 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SK3112 2SK3112-S 2SK3112-ZJ 2SK3112-Z
OCR Text	...1600 pF TYP. (VDS = 10 V, VGS = 0 V) * Avalanche capability rated * Built-in gate protection diode * Surface mount device available (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltag...
Description	SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE MOS FET
File Size	77.46K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SK3113-Z 2SK3113
OCR Text	...= 4.4 MAX. (VGS = 10 V, ID = 1.0 A) * Low gate charge QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) * Gate voltage rating 30 V * Avalanche capability ratings (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (...
Description	Switching power MOSFET SWITCHING N-CHANNEL POWER MOSFET
File Size	140.56K / 8 Page	View it Online	Download Datasheet

				NEC, Corp.
Part No.	2SK3113B 2SK3113B1-S27-AY 2SK3113B-S15-AY 2SK3113B-ZK-E1-AY 2SK3113B-ZK-E2-AY
OCR Text	...= 4.4 MAX. (VGS = 10 V, ID = 1.0 A) * Low gate charge QG = 7.9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) * Gate voltage rating : 30 V * Avalanche capability ratings <R> ORDERING INFORMATION PART NUMBER 2SK3113B-S15-AY Note Note Note ...
Description	2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA LEAD FREE, TO-252, MP-3ZK, 3 PIN MOS FIELD EFFECT TRANSISTOR
File Size	192.03K / 8 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK3119
OCR Text	...062A [2SK3119] 4.5 1.6 1.5 0.4 3 1.5 2 3.0 0.75 0.5 1 1.0 4.25max 2.5 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current...
Description	Ultrahigh-Speed Switching Applications
File Size	147.72K / 4 Page	View it Online	Download Datasheet

For 0.0109 Found Datasheets File :: 2818 Search Time::1.89ms
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