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				Savantic, Inc. http://
Part No.	2N6043 2N6045
OCR Text	...6045 IC=4A ,IB=16mA IC=30mA, IB=0 SYMBOL 2N6043 2N6044 2N6045 CONDITIONS MIN 60 80 100 TYP. MAX UNIT V VCEsat-1 Collector-emitter saturation voltage 2.0 IC=3A ,IB=12mA IC=8A ,IB=80mA IC=8A ,IB=80mA IC=4A ; VCE=...
Description	Silicon NPN Power Transistors
File Size	102.86K / 3 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	12P10-TN3-R 12P10-TN3-T 12P10G-TN3-R 12P10G-TN3-T 12P10L-TN3-T 12P10 12P10L-TN3-R
OCR Text	...ntrol. FEATURES * RDS(ON) = 0.29 @VGS = -10 V * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specifi...4A, VDD=-25V, RG=25, Starting TJ=25C 4. ISD-11.5A, di/dt300A/ s, VDDBVDSS, Starting TJ=25C THERMA...
Description	100V P-CHANNEL MOSFET
File Size	256.11K / 7 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TC2997G
OCR Text	...rce Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 22 0.6 *PSCL: Output Power of Single Carrier Le...
Description	3.5 GHz 16WFlange Ceramic Packaged GaAs Power FETs
File Size	136.54K / 3 Page	View it Online	Download Datasheet

				Silan Microelectronics Joint-stock
Part No.	SVD5N60AF SVD5N60AT
OCR Text	...ATURES 5A,600V,RDS(on) typ =2.0@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability ORDERING SPECIFICATIONS ...4A, VGS=10V (Note 3,4) VDD=300V,ID=4.4A, RG=25 Test conditions VGS=0V, ID=250A VDS=600V, VGS=0V VGS=...
Description	5A, 600V NCHANNEL MOSFET
File Size	482.16K / 7 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	FSS140
OCR Text	... unit : mm 2116 [FSS140] 8 5 0.3 4.4 6.0 0.2 5.0 1.5 0.595 1.27 0.43 0.1 1.8max Low ON-resistance. Ultrahigh-speed switching. 4.0V dri...4A, VGS=-4.5V ID=-4A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test ...
Description	Medium Output MOSFETs Load Switching Applications
File Size	28.44K / 4 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSG4575
OCR Text	...) 72m[ SOP-8 Description 0.40 0.90 0.19 0.25 45 o The SSG4575 provide the designer with the best combination of fast switchi...4A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Reverse Recovery ...
Description	Enhancement Mode Power Mos.FET
File Size	618.09K / 7 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTM4604A LTM4604AEV-PBF LTM4604AIV-PBF
OCR Text	...orts an output voltage range of 0.8V to 5V, set by a single resistor. This high efficiency design delivers up to 4A continuous current (5A peak). Only bulk output capacitors are needed to complete the design. The 0.630mm LGA pads with 1.27m...
Description	Low Voltage, 4A DC/DC μModule with Tracking Low Voltage, 4A DC/DC 楼矛Module with Tracking
File Size	359.64K / 20 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4425GO14
OCR Text	...5 to 150 rohs-compliant product 0.01 operating junction temperature range thermal data parameter the advanced power mosfets from apec provid...4a - 4 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-sou...
Description	Small & Thin Package
File Size	115.78K / 4 Page	View it Online	Download Datasheet

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