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  vdss-30v Datasheet PDF File

For vdss-30v Found Datasheets File :: 5469    Search Time::0.969ms    
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    IRF7328 IRF7328TR

International Rectifier
Part No. IRF7328 IRF7328TR
OCR Text ...FET Available in Tape & Reel VDSS -30V RDS(on) max 21m@VGS = -10V 32m@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve e...
Description    HEXFET Power MOSFET
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 106.75K  /  8 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ... FET 1 8 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 2 7 3 6 4 5 P -C H AN N E L MO S FET RDS(on) 0.045 0.090 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    IRF737LC

IRF[International Rectifier]
Part No. IRF737LC
OCR Text VDSS = 300V RDS(on) = 0.75 ID = 6.1A HEXFET(R) Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated Description This new series of Lo...
Description 300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET?? Power MOSFET

File Size 144.10K  /  8 Page

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    IRF7413A IRF7413ATR

International Rectifier
Part No. IRF7413A IRF7413ATR
OCR Text ...r MOSFET 1 2 8 7 S S S G VDSS = 30V 3 6 4 5 RDS(on) = 0.0135 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili...
Description Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)
Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.28K  /  9 Page

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    IRF7413 7413

International Rectifier
Part No. IRF7413 7413
OCR Text ...DS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characteriz...
Description Power MOSFET(Vdss=30V, Id=12A)
Power MOSFET(Vdss=30V/ Id=12A)

File Size 121.55K  /  8 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ...S G 1 8 7 A D D D D 2 VDSS = -30V 3 6 4 5 RDS(on) = 0.02 T op V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per sili...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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    IRF7424

International Rectifier
Part No. IRF7424
OCR Text ...unt Available in Tape & Reel VDSS -30V RDS(on) max (m) ) 13.5@VGS = -10V 22@VGS = -4.5V ID -11A -8.8A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the ext...
Description Ultra Low On-Resistance

File Size 166.10K  /  9 Page

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    IRFP27N60K

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP27N60K
OCR Text ...N60K HEXFET(R) Power MOSFET VDSS 600V RDS(on) typ. 180m ID 27A TO-247AC Max. 27 18 110 500 4.0 30 13 -55 to + 150 300 1...30V nA --- --- -100 VGS = -30V Min. 14 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- ...
Description Power MOSFET(Vdss=600V, Rds(on)typ.=180mohm, Id=27A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rdson)典\u003d 180mohm,身份证\u003d 27A条)
Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)

File Size 89.84K  /  8 Page

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    IRFS630A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS630A
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Cu...30V VGS=-30V VDS=200V VDS=160V,TC=125 C VGS=10V,ID=3.25A VDS=40V,ID=3.25A 4 O 4 O o o V/ C ID=2...
Description Advanced Power MOSFET

File Size 259.74K  /  7 Page

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    NDS9430 NDS943002

FAIRCHILD[Fairchild Semiconductor]
Part No. NDS9430 NDS943002
OCR Text ...solute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -30 20 (Note 1a) Units V V A W -5.3 -20 2.5 1.2 1 -55 to +175 Power Dissipation...
Description 30V P-Channel PowerTrench MOSFET

File Size 136.28K  /  5 Page

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