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  v 500v Datasheet PDF File

For v 500v Found Datasheets File :: 8290    Search Time::1.579ms    
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    ADPOW[Advanced Power Technology]
Part No. APT10035JFLL_03 APT10035JFLL APT10035JFLL03
OCR Text ...HARACTERISTICS UNIT Amps volts v/ns ns 25 100 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v TJ =+150C TJ =+25C 10 8 vDS=800v 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 90.44K  /  5 Page

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    P18N50

Fairchild Semiconductor
Part No. P18N50
OCR Text ...18a, 500v, r ds(on) = 0.265 @v gs = 10 v ? low gate charge ( typical 45 nc) ?low c rss ( typical 25 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effec...
Description Search --To FDP18N50

File Size 371.87K  /  10 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10030L2vR_04 APT10030L2vR APT10030L2vR04
OCR Text v(R) MOSFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the ...500v ID = 33A @ 25C vGS = 15v vDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT 10600 1000 500 ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 128.30K  /  4 Page

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    ADPOW[Advanced Power Technology]
Part No. APT10030L2vFR_04 APT10030L2vFR APT10030L2vFR04
OCR Text v(R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the...500v ID = 33A @ 25C vGS = 15v vDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT 10600 1000 500 ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 129.11K  /  4 Page

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    APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG

Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
OCR Text ...eak Diode Recovery dv/ dt 5 v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v vDS = 800v 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G...
Description Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN

File Size 100.91K  /  5 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
OCR Text ...HARACTERISTICS UNIT Amps volts v/ns ns 38 152 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v vDS = 800v 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G...
Description 38 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 101.61K  /  5 Page

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    Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JLL_03 APT10026JLL APT10026JLL03
OCR Text ...iode Recovery dv/ dt 5 Q v/ns THERMAL CHARACTERISTICS Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v vDS = 800v 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G...
Description 30 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.27K  /  5 Page

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT10026JFLL_03 APT10026JFLL APT10026JFLL03
OCR Text ...HARACTERISTICS UNIT Amps volts v/ns ns 30 120 1.3 18 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN (Body Diode) (vGS ...500v vDS = 800v 10 4 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G...
Description 30 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 107.67K  /  5 Page

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