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				Mitsubishi Electric Semiconductor
Part No.	CM1500HC-66R
OCR Text	...= 1800 V IC = 1500 A VGE = 15 V rg(on) = 1.6 Ls = 100 nH Inductive load tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time VCC = 1800 V...
Description	HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE 1500 A, 3300 V, N-CHANNEL IGBT
File Size	109.36K / 8 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM300DU-34KA09
OCR Text	...CC = 1000V, IC = 300A VGE = 15V rg = 3.1, Inductive load IE = 300A IE = 300A, VGE = 0V, Tj = 25C IE = 300A, VGE = 0V, Tj = 125C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case te...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	77.44K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM300DY-12NF09
OCR Text	...Q Rth(j-c)R Rth(c-f) Rth(j-c')Q rg Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate char...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	87.44K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	CM400DY-34A09
OCR Text	...1) Rth(j-c)Q Rth(j-c)R Rth(c-f) rg Parameter (Tj = 25C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 40mA, VCE = 10V VGE = VGES, VCE = 0V IC = 400A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 400A, VGE = 1...
Description	IGBT MODULES HIGH POWER SWITCHING USE
File Size	124.23K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOSP32320C
OCR Text	...lications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jl 30v n-channel mosfet orderable part number package type form minimum orde...
Description	Single LV MOSFETs (12V - 30V)
File Size	295.67K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductor
Part No.	AOSP21357
OCR Text	...lications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.1mh c e as t j , t stg symbol t 10s steady-state steady-state r q jl 30v p-channel mosfet orderable part number package type form minimum orde...
Description	Single P-Channel MOSFETs (8V - 60V)
File Size	210.39K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	...VDD = 250V --- ID = 8.0A ns --- rg = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 480V Dynamic @ T...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	...VDD = 250V --- ID = 8.0A ns --- rg = 9.1 --- RD = 31,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche C...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	... 5) VDD = 250 V, ID = 8.0 A, rg = 25 (Note 4, 5) -------- 22 65 125 75 41 6.5 17 55 140 260 160 53 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...VDD = 250V --- ID = 8.0A ns --- rg = 9.1 --- RD = 30, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1100 --- VGS = 0V 170 --- pF VDS = 25V 18 --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM ...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

For rg rg Found Datasheets File :: 39755 Search Time::0.907ms
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