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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21130HSR3 MRF5S21130HR3
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| OCR Text |
...YPICAL CHARACTERISTICS
14 13 g ps , POWER gAIN (dB) 12 11 10 9 8 7 IM3 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) g... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
379.13K /
12 Page |
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Central Semiconductor, Corp.
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| Part No. |
ICS810-06 ICS81006AKLF
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| OCR Text |
... e r l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u c n i e c n a t i c a p a c t u...g a t l o v y l p p u s e r o c 5 3 1 . 33 . 35 6 4 . 3v v o d d e g a t l o v y l p p u s t u p t u... |
| Description |
VCXO-TO-6 LVCMOS OUTPUTS 压控6 LVCMOS输出
VCXO-TO-6 LVCMOS OUTPUTS 压控 LVCMOS输出
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| File Size |
156.76K /
14 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
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| OCR Text |
...YPICAL CHARACTERISTICS
14 13 g ps , POWER gAIN (dB) 12 11 10 9 8 7 IM3 ACPR IRL VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB @ 0.01% Probability (C... |
| Description |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
395.61K /
12 Page |
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INTEGRATED DEVICE TECHNOLOGY INC
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| Part No. |
843002Ag-01LF
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| OCR Text |
... e r l o b m y sr e t e m a r a ps n o i t i d n o c t s e tm u m i n i ml a c i p y tm u m i x a ms t i n u c n i e c n a t i c a p a c t u...g a t l o v y l p p u s e r o c 7 9 . 23 . 33 6 . 3v v a c c e g a t l o v y l p p u s g o l a n a 7... |
| Description |
170 MHz, OTHER CLOCK gENERATOR, PDSO20
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| File Size |
455.84K /
17 Page |
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Motorola
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| Part No. |
MRF7S35120HSR3
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| OCR Text |
...ns input rise time power gain g ps 10.5 12 13.5 db drain efficiency d 38 40 ? % input return loss irl ? -15 -8 db pulsed rf performance (in freescale application test fixture, 50 ohm system) v dd = 32 vdc, i dq = 150 ma, p out = 120 ... |
| Description |
RF Power Field Effect Transistor
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| File Size |
494.53K /
11 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S9070NR1
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| OCR Text |
...LT -50 -55 -60 -65 -70 900
g ps , POWER gAIN (dB)
ACPR (dBc), ALT (dBc)
IRL
-12 -15 -18 -21 -24 -27 -30
Figure 3. Class AB Broadband Performance
20 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 900 mA 750 mA 600 ... |
| Description |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
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| File Size |
444.63K /
12 Page |
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it Online |
Download Datasheet |
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