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  ma-9 Datasheet PDF File

For ma-9 Found Datasheets File :: 304064    Search Time::3.75ms    
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    2SC5010 2SC5010-T1 2SC5010-T1-T2

NEC Corp.
Part No. 2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text ... GHz TYP. (@ VCE = 3 V, IC = 10 mA, f = 2 GHz) : 0.4 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 G...9 6 2 30 125 150 -65 to +150 V V V mA mW C C 1. Emitter 2. Base 3. Collector Document No. P103...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
128 x 128 pixel format, LED or EL Backlight available

File Size 59.95K  /  10 Page

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...3 100 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10399EJ2V0DS00 (2nd edition) (Previou...9 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 V...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 50.99K  /  8 Page

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    2SC5012 2SC5012-T1 2SC5012-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5012 2SC5012-T1 2SC5012-T2
OCR Text ....5 65 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10400EJ2V0DS00 (2nd edition) (Previou...9.0 0.25 15 1.2 2.5 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE =...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.43K  /  7 Page

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    2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB

NEC[NEC]
NEC Corp.
Part No. 2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text ....5 35 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10401EJ2V0DS00 (2nd edition) (Previou...9.5 1.8 3.0 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB =...
Description L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 51.33K  /  8 Page

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Caution; Electrostatic Sensitive ...9 75 12 0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...2 30 150 150 -65 to + 150 V V V mA mW C C Caution: Electrostatic Sensitive Device Document No. P10394EJ2V0DS00 (2nd edition) (Previous...9 75 12 0.3 11 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = ...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5019

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5019
OCR Text ... 80 1 150 -55 ~ +150 Unit V V V mA W C C 1:Base 2:Collector 3:Emitter EIAJ:SC-62 Mini Power Type Package marking Symbol VCBO VCEO VEBO ...9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V 2.50.1 +0.25 1 Transi...
Description Silicon NPN epitaxial planer type(For UHF band low-noise amplification)

File Size 37.02K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ...40 2 150 -55 to +150 Unit V V V mA mA W C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Collector cutoff current...9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park ...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ... 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector cutoff current Symbol I CBO I CEO Emitter...9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ... 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutof...9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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