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For ls gs Found Datasheets File :: 2901 Search Time::1.203ms
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				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111SL Q67040-S4003-A2 BUZ111
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 105 157 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 ...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
File Size	118.31K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111 BUZ111S Q67040-S4003-A2
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 105 160 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 ...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
File Size	120.08K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5Y5305CM
OCR Text	... Q gs Q gd td(on) tr td(off) tf ls + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Tota...
Description	POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V Rds(on)=0.065ohm Id=-18A) POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-18A*) -55V Single P-Channel Hi-Rel MOSFET in a TO-257AA package
File Size	106.37K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static ...gs = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1 TC = 25 C TJ = 175 C Single Pulse 10 100 10ms 10...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFY140CM
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal ...
Description	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=16*A)
File Size	248.13K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	SPD14N05 SPU14N05 Q67040-S4115-A2 Q67040-S4123-A2
OCR Text	...e recovery time V R = 30 V, IF=ls, diF/dt = 100 A/s Qrr 50 75 C Reverse recovery charge V R = 30 V, IF=ls, diF/dt = 100 A/s ...gs) parameter: tp = 80 s VDS2 x ID x RDS(on)max 35 A I D 25 20 15 10 5 0...
Description	SIPMOS Power Transistor SIPMOS功率晶体 SIPMOS ? Power Transistor From old datasheet system
File Size	139.85K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFRU6215 IRFU6215 IRFR6215
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss Min. -150 --- --- --- -2.0 3.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ...gs = -20V 66 ID = -6.6A 8.1 nC VDS = -120V 35 Vgs = -10V, See Fig. 6 and 13 --- VDD = -75V --- ID =...
Description	HEXFET? Power MOSFET Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)
File Size	137.32K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFRU9310 IRFU9310 IRFR9310
OCR Text	... Q gd t d(on) tr t d(off) tf LD ls Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static ...gs = 20V nA -100 Vgs = -20V 13 ID = -1.1A 3.2 nC VDS = -320V 5.0 Vgs = -10V, See Fig. 6 and 13 --- ...
Description	-400V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A) 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 7.0ohm，身份证\u003d- 1.8A
File Size	110.22K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFRU4105 IRFU4105 IRFR4105
OCR Text	...Qgs Qgd td(on) tr td(off) tf LD ls Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static ...gs = 0V, ID = 250A --- 0.052 --- V/C Reference to 25C, ID = 1mA --- --- 0.045 Vgs = 10V, ID = 16A 2...
Description	Power MOSFET(Vdss=55V / Rds(on)=0.045ohm / Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?) HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A) Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A?
File Size	140.69K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFU220N IRFR220N IRFR220NTR IRFR220NTRL IRFR220NTRR
OCR Text	...igible (turn-on is dominated by ls+LD) 2 www.irf.com IRFR/U220N 100 Vgs 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ...gs ds SHORTED Crss = C gd Coss = C + Cgd ds ID = 2.9A VDS = 160V VDS = 100V VDS = 40V Vgs , Ga...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 5A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\| 5A条（丁）\|52AA Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A)
File Size	130.56K / 10 Page	View it Online	Download Datasheet

For ls gs Found Datasheets File :: 2901 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |