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AK4648EC 100FC N5229B 2N377312 ON2781 MP3302DJ 2SD1763 UBA2051T
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    IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260

International Rectifier
Part No. IRHNA63260 IRHNA64260 IRHNA67260 IRHNA68260
OCR Text ...e with linear energy transfer (let) up to 90mev/(mg/cm 2 ). their combination of very low r ds(on) and faster switching times reduces power loss and increases power density in today?s high speed switching appli- cations such as dc-dc c...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package. Also available in 300, 600 and 1000kRad.

File Size 137.59K  /  8 Page

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    Littelfuse, Inc.
Part No. LEBAA
OCR Text ...and insulating boots. one-pole let solid neutral disconnects the let solid neutral disconnect is designed for use as a no-load non-fused disconnect. similar in design to the leb series fuseholders, the let is easily identified by its all...
Description
File Size 252.53K  /  6 Page

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    FSGL134R

Fairchild Semiconductor
Part No. FSGL134R
OCR Text ...at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated voltage for an let of 82 with extremely low gate charge characteristics. this mosfe...
Description Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

File Size 140.94K  /  9 Page

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    FSGL130R

Fairchild Semiconductor
Part No. FSGL130R
OCR Text ...at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated voltage for an let of 82 with extremely low gate charge characteristics. this mosfe...
Description Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

File Size 140.19K  /  9 Page

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    Sharp
Part No. XE-A212 XEA212
OCR Text ...araten och vara l?tt ?tkomligt. let op: het stopcontact dient in de buurt van de kassa en gemakkelijk toegangbaar te zijn. caution: for a complete electrical disconnection pull out the mains plug. vorsicht: zur vollst?ndigen elektrischen tr...
Description Electronic Cash Register

File Size 1,090.23K  /  84 Page

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    Intersil
Part No. FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ9160 FSJ9160D FSJ9160D1 FSJ9055R FSJ9055D1
OCR Text ...vent effects - see immunity for let of 36mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 10v off-bias ? dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i dm ? pho...
Description 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs

File Size 66.63K  /  8 Page

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    Micrel Semiconductor, Inc.
Part No. FSGYC164D1 FSGYC164R4 FSGYC164R3
OCR Text ...at full rated voltage up to an let of 37. star*power gold fets have been optimized for see and gate charge combining see performance to 80% of the rated volt age for an let of 82 with extremely low gate charge characteristics. this mos...
Description TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 69A I(D) | SMT 晶体管| MOSFET的| N沟道| 150伏五(巴西)直| 69A条(丁)|贴片

File Size 106.59K  /  7 Page

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    FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3

INTERSIL[Intersil Corporation]
Part No. FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3
OCR Text ...vent Effects - SEE Immunity for let of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Curre...
Description From old datasheet system
3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 58.10K  /  8 Page

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    FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R3 FSL130R4 FN4031
OCR Text ...vent Effects - SEE Immunity for let of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Curre...
Description From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条,100V的,0.230欧姆,拉德硬,SEGR耐,N沟道功率MOSFET

File Size 45.31K  /  8 Page

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