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  isd-74 Datasheet PDF File

For isd-74 Found Datasheets File :: 773    Search Time::1.218ms    
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    IRFBC30A

International Rectifier, Corp.
Part No. IRFBC30A
OCR Text ...THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 10 10 10us TJ = 150 C TJ = 25 C 1 100us 1 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Sing...
Description 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

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    IRL1104

International Rectifier
http://
Part No. IRL1104
OCR Text ... 25, IAS =62A. (See Figure 12) ISD 62A, di/dt 217A/s, VDD V(BR)DSS, TJ 175C Notes: Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature;for recommended current-handli...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR
OCR Text ...THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) I D , Drain Current (A) 10 10 10us TJ = 150 C TJ = 25 C 1 100us 1 1ms 0.1 0.4 V GS = 0 V 0.6 0.8 1.0 1.2 0.1 TC = 25 C TJ = 150 C Sing...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A

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    IRFPC50A SIHFPC50A SIHFPC50A-E3 IRFPC50APBF

Vishay Siliconix
Part No. IRFPC50A SIHFPC50A SIHFPC50A-E3 IRFPC50APBF
OCR Text ... , IAS = 11 A (see fig. 12). c. ISD 11 A, dI/dt 126 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not Ro...74 81 15 40 33 29 70 19 28 ns nC pF VDD = 300 V, ID = 11 A RG = 6.2 , RD= 30 see fig. 10b ...
Description Power MOSFET

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    HUF75652G3

FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75652G3
OCR Text ... Drain Diode Voltage SYMBOL VSD ISD = 75A ISD = 35A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 75A, dISD/dt = 100A/s ISD = 75A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 1.00 150 490 UNITS V V ns nC (c)2001 Fair...
Description 75A, 100V, 0.008 Ohm, N-Channel UltraFETPower MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,100V
75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET
75A/ 100V/ 0.008 Ohm/ N-Channel UltraFET Power MOSFET

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    IRFIBC40G SIHFIBC40G SIHFIBC40G-E3 IRFIBC40GPBF

Vishay Siliconix
Part No. IRFIBC40G SIHFIBC40G SIHFIBC40G-E3 IRFIBC40GPBF
OCR Text ..., IAS = 3.5 A (see fig. 12). c. ISD 6.2 A, dI/dt 80 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91182 S-81273-Rev. A, 16-Jun-08 www.vishay.com 1...
Description Power MOSFET

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    KDB2572

Guangdong Kexin Industrial Co.,Ltd
Part No. KDB2572
OCR Text ...S = 10 V, RGEN = 11 14 31 14 66 ISD=9A ISD=4A ISD = 9A, dISD/dt =100A/is ISD = 9A, dISD/dt =100A/is 1.25 1.0 74 169 34 4.3 pF pF pF nC nC nC nC nC ns ns ns ns ns ns V V ns nC U Typ Max Unit V A A nA V VDS=120V,VGS=0 VDS=120V,VGS=0,TC=150...
Description N-Channel PowerTrench MOSFET

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    IRF646 FN2169

INTERSIL[Intersil Corporation]
Part No. IRF646 FN2169
OCR Text ...o Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 14 56 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery...
Description 14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
From old datasheet system

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    FDB8444TS

Fairchild Semiconductor
Part No. FDB8444TS
OCR Text ...ry Time Reverse Recovery Charge ISD = 70A ISD = 40A ISD = 70A, dISD/dt = 100A/s 1.0 0.9 51 70 1.25 1.0 66 91 V ns nC Temperature Sense Di...74 1.63 -3.11 V mV/oC Notes: 1: Starting TJ = 25oC, L = 0.28mH, IAS = 56A. This product has be...
Description N-Channel PowerTrench? MOSFET with Temperature Sensor
N-Channel PowerTrench㈢ MOSFET with Temperature Sensor

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