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Wuxi NCE Power Semicond...
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| Part No. |
NCEP15T11J
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| OCR Text |
... general features vds =135v,id =110a rds(on) <7.0m ? @ vgs=10v excellent gate charge x r ds(on) product(fom) very low on-re...55a - 6.3 7.0 m ? forward transconductance g fs v ds =10v,i d =55a 70 - - s dynamic cha... |
| Description |
NCE N-Channel Super Trench Power MOSFET
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| File Size |
354.52K /
7 Page |
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it Online |
Download Datasheet
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Wuxi NCE Power Semicond...
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| Part No. |
NCEP15T11
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| OCR Text |
... general features vds =150v,id =110a rds(on) <7.8m ? @ vgs=10v excellent gate charge x r ds(on) product(fom) very low on-re...55a - 7 7.8 m ? forward transconductance g fs v ds =10v,i d =55a 70 - - s dynamic chara... |
| Description |
NCE N-Channel Super Trench Power MOSFET
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| File Size |
352.60K /
7 Page |
View
it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCEP15T11D
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| OCR Text |
... general features vds =150v,id =110a rds(on) <7.8m ? @ vgs=10v excellent gate charge x rds(on) product(fom) very low on-resi...55a - 6 7.8 m ? forward transconductance g fs v ds =10v,i d =55a 70 - - s dynamic chara... |
| Description |
NCE N-Channel Super Trench Power MOSFET
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| File Size |
325.27K /
7 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF55N10
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...55A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% ... |
| Description |
100V N-Channel MOSFET
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| File Size |
651.56K /
8 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
http://
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| Part No. |
IRFZ44VSPBF IRFZ44VLPBF IRFZ44VL
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| OCR Text |
...= 60V RDS(on) = 16.5m
G S
ID = 55A
Description
Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi... |
| Description |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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| File Size |
213.84K /
10 Page |
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it Online |
Download Datasheet |
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Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUFA76432S3S HUFA76432P3 HUFA76432S3ST
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| OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...55A rDS(ON), DRAIN TO SOURCE ON RESISTANCE (m) 40 ID = 37A PULSE DURATION = 80s DUTY CYCLE = 0.5% MA... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 55A条（丁）|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
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| File Size |
213.72K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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