| |
|
 |
ShenZhen FreesCale Electronics. Co., Ltd
|
| Part No. |
AO4601
|
| OCR Text |
...esistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.... |
| Description |
Complementary Enhancement Mode Field Effect Transistor
|
| File Size |
487.99K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
Shenzhen Winsemi Microelectronics Co., Ltd
|
| Part No. |
WFW9N90
|
| OCR Text |
...s = 30 v ,v d s =0v - - 10 na gat e -source breakdown v oltage v (br) g ss i g = 10 a,v ds =0v 30 - - v drain c ut -o f f current i dss v ds = 720 v , v gs =0v - - 100 a drain -source breakdown v oltage v (br)dss i d = 10 m a,v g s =0... |
| Description |
Silicon N-Channel MOSFET
|
| File Size |
433.63K /
7 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|