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  gat Datasheet PDF File

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    FGW15N120H

Fuji Electric
Part No. FGW15N120H
OCR Text ... n e r g y l o sses [ m j ] gat e r e s is tor r g [] e off e on 4 discrete igbt fgw15n120h http://www.fujielectric.com/products/semiconductor/ 5 gr aph.1 4 tr an s ient therm al re s is t ance of i gb t 1 0 - 6 1 0 - 5 1...
Description Discrete IGBT (High-Speed V series) 1200V / 15A

File Size 405.20K  /  6 Page

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    IN74HCT30A

IK Semicon Co., Ltd
Part No. IN74HCT30A
OCR Text ...74hc t 30a i s hi gh-speed si -gat e c m os devi ce and i s pi n com p atible with low power schottk y ttl (lsttl) . the device provide t h e 8-i nput nand funct i on. ? outputs directly interf ace to cmos, nmos, and ttl ? op...
Description High Noise Immunity Characteristic of CMOS Devices

File Size 179.42K  /  5 Page

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    10-FY12NMA160SH01-M820F18

Vincotech
Part No. 10-FY12NMA160SH01-M820F18
OCR Text ...nction temperature t j =t j max gat e-emitter peak voltage collector-emitter break down voltage pulsed collector current i fsm a p tot i fav power dissipation per diode t j =25c t j =t j max t p =10ms 14 dc collector current v ces i cpul...
Description mixed voltage NPC topology

File Size 2,943.26K  /  26 Page

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    2MBI650VXA-170E-50

Fuji Electric
Part No. 2MBI650VXA-170E-50
OCR Text ...ctor-emitter voltage: v ce [v] gat e c apac it anc e: c ie s, c oe s, c res [ nf ] ** * cies cres coes 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u...
Description IGBT MODULE (V series) 1700V / 650A / 2 in one package

File Size 350.90K  /  7 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4601
OCR Text ...esistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1....
Description Complementary Enhancement Mode Field Effect Transistor

File Size 487.99K  /  7 Page

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    FDS6670AS10

Fairchild Semiconductor
Part No. FDS6670AS10
OCR Text ... 13 23 ns q g( to t) total gat e cha rge at vgs=10v 27 38 nc q g total gat e cha rge at vgs=5v 16 22 nc q gs gate?source ch arge 4.2 nc q gd gate?drain cha rge v dd = 15 v, i d = 13.5 a, 5.1 nc mv/...
Description 30V N-Channel PowerTrench SyncFET

File Size 201.45K  /  7 Page

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    2MBI1400VXB-120P-50

Fuji Electric
Part No. 2MBI1400VXB-120P-50
OCR Text ...ctor-emitter voltage: v ce [v] gat e c apac it anc e: c ie s, c oe s, c res [ nf ] 0 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 collector-emitter voltage: v ce [v] c o lle c t o r c u rr en t: i c [ a] v ge =20v 15v 12v 10v 8v 0 ...
Description IGBT MODULE (V series) 1200V / 1400A / 2 in one package

File Size 351.22K  /  7 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WFW9N90
OCR Text ...s = 30 v ,v d s =0v - - 10 na gat e -source breakdown v oltage v (br) g ss i g = 10 a,v ds =0v 30 - - v drain c ut -o f f current i dss v ds = 720 v , v gs =0v - - 100 a drain -source breakdown v oltage v (br)dss i d = 10 m a,v g s =0...
Description Silicon N-Channel MOSFET

File Size 433.63K  /  7 Page

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