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g1db Datasheet PDF File

For g1db Found Datasheets File :: 740 Search Time::1.375ms
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				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM3742-8UL
OCR Text	...m at 3.7GHz to 4.2GHz HIGH GAIN g1db=11.0dB at 3.7GHz to 4.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at ...
Description	MICROWAVE POWER GaAs FET
File Size	68.81K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TMD5872-2
OCR Text	...NCY add=21% (TYP.) HIGH GAIN g1db=28.0dB (TYP.) BROADBAND OPERATION f=5.8-7.2GHz ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain Supply Voltage Gate Supply Voltage Input Power Flange Temperature Storage Temperature ( Ta= 25C ) SY...
Description	MICROWAVE POWER MMIC AMPLIFIEMICROWAVE AMPLIFIER From old datasheet system
File Size	32.64K / 3 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc.
Part No.	EIM7185-4
OCR Text	...D2=10V, Vgg=-5V) SYMBOL F P1dB g1db Gain OIMD3 Input RL Output RL VD1 VD2 IDQ1 IDQ2 Vgg Rth Tb PARAMETER/TEST CONDITIONS Operating Frequency Range Output Power at 1dB Gain Compression Gain @1dB gain compression Gain Flatness Output 3 Order...
Description	7.1 - 8.5 GHz Multi-Stage Power Amplifier
File Size	152.25K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM1414-7-252
OCR Text	...13.75 GHz to 14.5 GHz HIGH GAIN g1db=6.0 dB at 13.75 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1d...
Description	HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
File Size	146.00K / 4 Page	View it Online	Download Datasheet

				Fujitsu Microelectronics Fujitsu Component Limited.
Part No.	FLU17ZM
OCR Text	g1db=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using a pla...
Description	From old datasheet system L-Band Medium & High Power GaAs FET
File Size	229.77K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TIM3742-16UL
OCR Text	...at 3.7GHz to 4.2GHz n HIGH GAIN g1db=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain...
Description	HIGH POWER P1dB=42.5dBm at 3.7GHz to 4.2GHz
File Size	44.99K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT-42085 AT42085
OCR Text	...(dB) 4.0 GHz 12 G1 dB (dB) g1db 16 14 g1db 10 V 6V 4V 4 8 4.0 GHz 12 10 0 10 20 30 IC (mA) 40 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 50 Figure 1. Insertion ...
Description	Up to 6 GHz Medium Power Up to 6 GHz Medium Power
File Size	46.40K / 5 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	AT-42070
OCR Text	...dB) 4.0 GHz 12 G1 dB (dB) g1db 16 4.0 GHz 10 V 6V 4V 4 8 14 g1db 12 10 0 10 20 30 IC (mA) 40 50 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 Figure 1. Insertion...
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor
File Size	46.08K / 5 Page	View it Online	Download Datasheet

				HIROSE ELECTRIC Co., Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	AT-42035
OCR Text	...(dB) 4.0 GHz 12 G1 dB (dB) g1db 16 14 g1db 10 V 6V 4V 4 8 4.0 GHz 12 10 0 10 20 30 IC (mA) 40 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 50 Figure 1. Insertion ...
Description	Up to 6 GHz Medium Power Silicon Bipolar Transistor GHz中等功率硅双极晶体管
File Size	47.37K / 5 Page	View it Online	Download Datasheet

				Pasternack Enterprises, Inc. Toshiba Semiconductor
Part No.	TIM5964-60SL
OCR Text	...at 5.9GHz to 6.4GHz T HIGH GAIN g1db=8.5dB at 5.9GHz to 6.4GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) UNIT dBm dB A dB % dBc A C MIN. 47.0 7.5 -42 TYP. MAX. 48...
Description	MICROWAVE POWER GaAs FET 微波功率GaAs场效应管
File Size	80.28K / 4 Page	View it Online	Download Datasheet

For g1db Found Datasheets File :: 740 Search Time::1.375ms
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