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di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569 Search Time::1.516ms
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				Advanced Power Technology
Part No.	APT50GT120JU2
OCR Text	...ecovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 31 t j = 25c 370 t rr reverse recovery time t j = 125c 500 ns t j = 25c 5 i rrm maximum reverse recovery current t j = 125c 12 a t j = 25c ...
Description	Boost Chopper - IGBT
File Size	606.07K / 7 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	ST380CH04C0L VS-ST380CH04C0 VS-ST380CH04C1
OCR Text	...e of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical ...500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of o...
Description	Phase Control Thyristors
File Size	215.02K / 9 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	TT375N
OCR Text	...c 747-6 f = 50 hz, i gm = 1 a, di g /dt = 1 a/s (di t /dt) cr 120 a/s kritische spannungssteilheit critical rate of rise of off-state volta...500 600 i tav [a] = 30 60 90 120 180 0 0 180 durchlassverlustleistung je zweig / on-state power ...
Description	Netz-Thyristor-Modul Phase Control Thyristor Module
File Size	403.25K / 13 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT75GT120JU2
OCR Text	...ecovery time i f =1a,v r =30v di/dt =100a/s t j = 25c 31 t j = 25c 370 t rr reverse recovery time t j = 125c 500 ns t j = 25c 5 i rrm maximum reverse recovery current t j = 125c 12 a t j = 25c ...
Description	Boost Chopper - IGBT
File Size	606.68K / 7 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	T360N
OCR Text	...0747-6 f = 50 hz, i gm = 1 a, di g /dt = 1 a/s (di t /dt) cr 60 a/s kritische spannungssteilheit critical rate of rise of off-state v...500 1000 v/s v/s charakteristische werte / characteristic values durchlassspannung on-state vo...
Description	Netz-Thyristor Phase Control Thyristor
File Size	237.69K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	ST380C06C0L ST380CPBF-15
OCR Text	...e of rise of turned-on current di/dt gate drive 20 v, 20 , t r 1 s t j = t j maximum, anode voltage 80 % v drm 1000 a/s typical ...500 s 100 blocking parameter symbol test conditions values units maximum critical rate of rise of o...
Description	Phase Control Thyristors
File Size	215.54K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STTH512
OCR Text	...verse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 95 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 ...500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =600v t =125c r j 0 50 100...
Description	Ultrafast recovery diode
File Size	130.24K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STTH506
OCR Text	..., t j = 25 c 30 ns i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 35 50 i rm reverse recovery current i f = 5 a, di f /dt = -100...500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) i =0.25 x i ff(av) v =400v t...
Description	Turbo 2 ultrafast - high voltage rectifier
File Size	136.48K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	JANSR2N7270 JANSF2N7270 JANSG2N7270
OCR Text	...1100 ns t j = 25c, i f = 11a, di/dt 100a/ m s q rr reverse recovery charge 16 m cv dd 50v ? t on forward turn-on time intrinsic ...500 500 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.25 4.5 v gs = v d...
Description	500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 500V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
File Size	310.75K / 12 Page	View it Online	Download Datasheet

For di-500 Found Datasheets File :: 31569 Search Time::1.516ms
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