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8mh Datasheet PDF File

For 8mh Found Datasheets File :: 457 Search Time::0.641ms
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				InterFET Corporation International Rectifier
Part No.	SI3443DVPBF SI3443DVTRPBF
OCR Text	...5sec. Starting TJ = 25C, L = 6.8mh RG = 25, IAS = -3.0A. Pulse width 300s; duty cycle 2%. 2 www.irf.com Si3443DVPbF 100 VGS -7.50V -5.00V -4.00V -3.50V -3.00V -2.50V -2.00V BOTTOM -1.50V TOP 100 -I D , Drain-to-Sour...
Description	Ultra Low On-Resistance HEXFETPower MOSFET HEXFET Power MOSFET
File Size	106.04K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP09N70P-A
OCR Text	...tarting Tj=25 C , VDD=50V , L=6.8mh , RG=25 , IAS=9A. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 9 40 1.5 A A V Pulsed Source Current ( Body Diode ) ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	58.99K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP09N70P AP09N70R
OCR Text	...tarting Tj=25oC , VDD=50V , L=6.8mh , RG=25 , IAS=9A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V Tj=25, IS=9A, VGS=0V Min. - Typ. - Max. Units 9 ...
Description	N-CHANNEL ENHANCEMENT MODE
File Size	84.61K / 6 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP09N90CW
OCR Text	...tarting Tj=25oC , VDD=50V , L=6.8mh , RG=25 , IAS=6A. 3.Pulse width <300us , duty cycle <2%. Parameter Forward On Voltage 3 Test Conditions IS=7.2A, VGS=0V IS=7.2A, VGS=0V, dI/dt=100A/s Min. - Typ. 673 9.6 Max. Units 1.5 A ns C...
Description	N-CHANNEL ENHANCEMENT MODE
File Size	72.16K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP09N90W
OCR Text	...tarting Tj=25oC , VDD=50V , L=6.8mh , RG=25 , IAS=5.2A. 3.Pulse width <300us , duty cycle <2%. Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.5V 1 Min. - Typ. - Max. Units 8.6 30 1.5 A A V ...
Description	N-CHANNEL ENHANCEMENT MODE
File Size	71.29K / 4 Page	View it Online	Download Datasheet

				Formosa MS
Part No.	FM4933
OCR Text	...RELAY AND RECTIFIER INDUCTIVE=3.8mh FIG.5-TYPICAL JUNCTION CAPACITANCE 35 30 25 20 15 10 5 R2- TEN 1W 10W 1% CARBON CORE IN PARALLEL TA= 25 +10 0 C FOR RECTIFIER IFM 1.0 i(t) di/dt=50A/mS trr 0 IRM(REC) 2.0 1cm SET TIME ...
Description	Chip Silicon Rectifier - Fast recovery type
File Size	39.82K / 2 Page	View it Online	Download Datasheet

				AUK corp
Part No.	STK0760F
OCR Text	...ximum Junction Temperature L=9.8mh, IAS=7A, VDD=50V, RG=27 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T0O006-000 3 STK0760F Electrical Characteristic Curves Fig. 1 ID - V...
Description	Advanced Power MOSFET
File Size	469.72K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQB7N65C FQB7N65CTM
OCR Text	...mum junction temperature 2. L = 8mh, IAS = 7A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperat...
Description	650V N-Channel MOSFET
File Size	717.54K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDPF14N30 FDP14N30
OCR Text	...m junction temperature 2. L = 2.8mh, IAS = 14A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 14A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Tempera...
Description	300V N-Channel MOSFET
File Size	298.40K / 10 Page	View it Online	Download Datasheet

For 8mh Found Datasheets File :: 457 Search Time::0.641ms
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