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  600v- Datasheet PDF File

For 600v- Found Datasheets File :: 16361    Search Time::1.218ms    
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    IRPLDIM4E

International Rectifier
Part No. IRPLDIM4E
OCR Text ...mp exchange auto-restart, and a 600V half-bridge driver into a standard SO8 or DIP8 package. The IRS2530D includes adaptive zero-voltage switching, non-zero voltage switching (ZVS) protection, as well as an integrated 600V bootstrap MOSFET....
Description Miniature Dimmable 26W Ballast Using IRS2530D DIM8TM Control IC

File Size 644.72K  /  17 Page

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    CM450DX-24A

Mitsubishi Electric Semiconductor
Part No. CM450DX-24A
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 450A, VGE = 15V VCC = 600V, IC = 450A VGE = 15V, RG = 0.68 Inductive load (Note. 6) Tj = 25C Tj = 125C Chip (IE = 450A) (Note. 6) VEC(Note.3) Emitter-collector voltage Rlead Rth(j-c)Q Rth(j-c...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 127.98K  /  7 Page

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    SGP20N60HS09 SGP20N60HS SGW20N60HS

http://
Infineon Technologies AG
Part No. SGP20N60HS09 SGP20N60HS SGW20N60HS
OCR Text ...ove 30 kHz * NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution * * * * G E PG-TO-220-3-1 PG-TO-247-3 High ruggedness, tempera...
Description High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

File Size 381.41K  /  12 Page

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    HGTG12N60C3D

Harris, Corp.
Fairchild Semiconductor
HARRIS[Harris Corporation]
Part No. HGTG12N60C3D
OCR Text 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package JEDEC STYLE TO-247 E C G January 1997 Features * * * * * 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Cir...
Description 36 MACROCELL 3.3 VOLT ISP CPLD 4A00V的,的ufs系列N沟道IGBT的与反平Hyperfast二极
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 102.34K  /  7 Page

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    CM400DU-24NFH09

Mitsubishi Electric Semiconductor
Part No. CM400DU-24NFH09
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = 15V RG = 0.78, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 93.26K  /  4 Page

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    SIGC12T60SNC

Infineon Technologies AG
Part No. SIGC12T60SNC
OCR Text 600V NPT technology * 100m chip * short circuit prove * positive temperature coefficient * easy paralleling C This chip is used for: * SGP10N60 Applications: * drives G E Chip Type SIGC12T60SNC SIGC12T60SNC VCE 600V 600V ...
Description IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient

File Size 75.05K  /  4 Page

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    SIGC42T60UN

Infineon Technologies AG
Part No. SIGC42T60UN
OCR Text 600V NPT technology * 100m chip * short circuit prove * positive temperature coefficient easy paralleling This chip is used for: * SGW50N60HS Applications: * Welding * PFC * UPS C G E Chip Type SIGC42T60UN VCE 600V ICn 50A...
Description High Speed IGBT Chip in NPT-technology positive temperature coefficient easy paralleling

File Size 59.73K  /  4 Page

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    CM200DU-24NFH09 CM200DU-24NFH

Mitsubishi Electric Semiconductor
Part No. CM200DU-24NFH09 CM200DU-24NFH
OCR Text ... = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1...
Description IGBT MODULES HIGH POWER SWITCHING USE

File Size 97.31K  /  4 Page

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    PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. PM400DAS060 PM400HSA12 PM800HSA06 PM75RVA060 PM400DVA060 PM100CVA120
OCR Text ...s with ratings ranging from 10A 600V to 800A 1200V. The power semiconductors used in these modules are based on the field proven H-Series IGBT and diode processes. In Table 6.1 the third generation family has been divided into two groups, t...
Description USING INTELLIGENT POWER MODULES
FLAT-BASE TYPE INSULATED PACKAGE

File Size 922.36K  /  31 Page

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    PP225D060

POWEREX[Powerex Power Semiconductors]
Part No. PP225D060
OCR Text 600V TM Half Bridge IGBT Assembly Description: The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, ...
Description POW-R-PAK 200A / 1200V 3 phase IGBT Assembly

File Size 360.12K  /  6 Page

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