600-052 pdf Datasheet P12 Full Text Search --- IC-ON-LINE


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600-052 Datasheet PDF File

For 600-052 Found Datasheets File :: 3123 Search Time::5.516ms
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				HITACHI[Hitachi Semiconductor] RENESAS[Renesas Electronics Corporation]
Part No.	HD29026A J205001HD29026A HD29028 HD29027 J205001_HD29026A
OCR Text	...25 VCC = 8 V RD = 10 400 600 800 1000 400 600 800 1000 TTHL - CL 40 30 20 (ns) 10 0 200 Ta = 25 VCC = 12 V RD...052) 243-3111 ( ) (06) 6616-1111 ( ) (082) 223-4111 ( ) (087) 831-2111 ( ) (089) 943-1333 ( ) (092) ...
Description	Dual CCD Drivers
File Size	232.91K / 18 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFBC30A
OCR Text	...fective Output Capacitance Min. 600 --- --- 2.0 --- --- --- --- Min. 2.1 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.67 -...052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LE AD A S SIG NME NT S 1...
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
File Size	99.53K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBC30S IRFBC30L
OCR Text	...se Transfer Capacitance Min. 600 --- --- 2.0 2.5 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.62 --- --- ---...052) 1.22 (.048) 10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (....
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)
File Size	358.14K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFI540N
OCR Text	....U.T. RG + 10 V 700 TO P 600 B O TTO M 500 ID 6.6A 11A 16A VDD IAS tp 0.01 400 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 300 200 100 0 V D D = 25V 25 50 75 100 125 150 A 17...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.052ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.052ohm，身份证\u003d 20A条） Power MOSFET(Vdss=100V/ Rds(on)=0.052ohm/ Id=20A)
File Size	127.71K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MC14562BCP MC14562B MC14562
OCR Text	... -- -- -- -- -- 1.0 -- 150 300 600 mAdc 3.5 7.0 11 -- -- -- 3.5 7.0 11 2.75 5.50 8.25 -- -- -- 3.5 7.0 11 -- -- -- mAdc Min -- -- -- - 55_C...052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 --- 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 18.80 6....
Description	128-Bit Static Shift Register
File Size	117.36K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MPIC2112 MPIC2112DW MPIC2112P MPIC2112_D ON2310
OCR Text	...ation which operates from 10 to 600 volts. MPIC2112 HIGH AND LOW SIDE DRIVER 14 1 * * * * * * * * * * * * * Floating Channel De...052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 ...
Description	From old datasheet system HIGH AND LOW SIDE DRIVER
File Size	160.16K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MPIC2113 MPIC2113DW MPIC2113P MPIC2113_D ON2311
OCR Text	...ation which operates from 10 to 600 volts. MPIC2113 HIGH AND LOW SIDE DRIVER 14 1 * * * * * * * * * * * * * Floating Channel De...052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 ...
Description	From old datasheet system HIGH AND LOW SIDE DRIVER
File Size	171.02K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SC5336
OCR Text	...S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG .519 .413 .413 .345 .331 .320 .30...052 .061 .071 .081 .092 .095 .098 .109 .117 .125 .137 .143 .159 .163 .171 .184 S12 ANG 71.1 71.2 71....
Description	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
File Size	47.62K / 6 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT30GT60BRD
OCR Text	...Total Power Dissipation 1 1 600 600 20 55 30 110 60 200 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 110C Operating and St...052-6251 Rev B DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off)...
Description	The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 55A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
File Size	68.57K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT30GT60BR
OCR Text	...specified. APT30GT60BR UNIT 600 RY A IN MIN Collector-Gate Voltage (RGE = 20K) Emitter-Collector Voltage Gate-Emitter Voltage Con...052-6211 Rev B Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-...
Description	The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 58A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
File Size	24.51K / 2 Page	View it Online	Download Datasheet

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