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Infineon
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| Part No. |
BFR93AW
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| OCR Text |
...rent i c 50 ma base current i b 6 total power dissipation , t s 104 c f) p tot 300 mw junction temperature t j 150 c ambient temperat...9ghz v ce = parameter 0 10 20 30 40 ma 60 i c 0 2 4 6 8 10 12 14 db 18 g 10v 5v 3... |
| Description |
NPN Silicon RF Transistor for low dis...
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| File Size |
136.88K /
7 Page |
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it Online |
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RF Micro Devices, Inc.
sirenza
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| Part No. |
SZA-6044
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| OCR Text |
...at 1db compression ? 5.5 ghz 24.6 output power at 1db compression ? 5.9 ghz 22.5 24.0 26.0 s 21 small signal gain ? 5.1 ghz db 17.0 18.5 20....9ghz db 8 11 orl worst case output return loss 5.1-5.9ghz db 12 17 oip 3 output ip3, pout per tone ... |
| Description |
5100 MHz - 5900 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 4 X 4 MM, PLASTIC, QFN-20
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| File Size |
126.63K /
6 Page |
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it Online |
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njr
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| Part No. |
NJM12903 NJG1101F
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| OCR Text |
...m)
F TYPE (Top View)
1
6
2
5
Pin connection 1.RFin 2.GND 3.VCONT 4.RFout & VDD 5.GND 6.VDD
3
Note:
4
is a package ...9GHz Band: Measured on TEST CIRCUIT 2)
GAIN vs. FREQUENCY
(V =3V)
DD
GAIN vs. V
20
cont
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| Description |
SINGLE SUPPLY DUAL COMPARATOR
WIDE BAND AGC AMPLIFIER GaAs MMIC
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| File Size |
542.24K /
15 Page |
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it Online |
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Infineon
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| Part No. |
PMB2331-T
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| OCR Text |
... . . . . . . . . . . . . . . . .6 1.4 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...9ghz 1a 5 input intercept point, d f=800khz, if= 45mhz iicp3 mi -2 dbm f=0.9ghz 1a 6 blocking level ... |
| Description |
2 GHz-Mixer
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| File Size |
405.03K /
22 Page |
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it Online |
Download Datasheet |
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http://
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| Part No. |
BFP410
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| OCR Text |
...rent i c 40 ma base current i b 6 total power dissipation 1) t s 100 c p tot 150 mw junction temperature t j 150 c ambient temperature...9ghz 1.5ghz 1.9ghz 2.4ghz 3.5ghz 5.5ghz 10ghz power gain g ma , g ms = ? ( v ce ) i c = 13 ma ... |
| Description |
NPN Silicon RF Transistor
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| File Size |
543.41K /
8 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BFR182
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| OCR Text |
... v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.33 0.5 pf collector-emitter capaci...9ghz v ce = parameter 0 5 10 15 ma 25 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0.7v po... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
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| File Size |
116.41K /
7 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
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| Part No. |
BFR182W
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| OCR Text |
... v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 0.4 0.65 pf collector-emitter capaci...9ghz v ce = parameter 0 4 8 12 16 20 ma 26 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0.... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管)
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| File Size |
117.00K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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