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Sanken
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| Part No. |
2SC3833
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| OCR Text |
... 2SC3833 500 400 10 12(Pulse24) 4 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
...3mH -IB2=1A Duty:less than 1%
0.01 5 10 50 100 500 Collector-Emitter Voltage V C E( V)
0.01 5
... |
| Description |
Silicon NPN Transistor
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| File Size |
30.87K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
IRLS530A IRLS530
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| OCR Text |
...Junction-to-Ambient Typ. --Max. 4.2 62.5 Units
o
C/W
Rev. A
IRLS530A
Electrical Characteristics (TC=25 unless otherwise specified...3mH, IAS=10.7A, VDD=25V, RG=27, Starting TJ =25 ISD14A, di/dt350A/s, VDDBVDSS , Starting TJ =25 Pu... |
| Description |
Advanced Power MOSFET
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| File Size |
256.78K /
7 Page |
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VICOR[Vicor Corporation]
Vicor, Corp.
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| Part No. |
EN55022 EN61000-4-5 EN61000-3-2 EN61000-4-11 ENMOD EN1TS3 EN1C11 EN1C12 EN1C13 EN1C21 EN1C22 EN1C23 EN1CN1 EN1CN2 EN1CN3 EN1CS1 EN1CS2 EN1CS3 EN1H11 EN1H12 EN1H13 EN1H21 EN1H22 EN1H23 EN1HN1 EN1HN2 EN1HN3 EN1HS1 EN1HS2 EN1HS3 EN1M11 EN1M12 EN1M13 EN1M21 EN1M22 EN1M23 EN1MN1 EN1MN2 EN1MN3 EN1MS1 EN1MS2 EN1MS3 EN1T11 EN1T12 EN1T13 EN1T21 EN1T22 EN1T23 EN1TN1 EN1TN2 EN1TN3 EN1TS1 EN1TS2
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| OCR Text |
...* Transient Immunity to EN61000-4-5 * 575W Rated Power Output * Autoranging 115/230Vac Input * Microprocessor Control * Inrush Current Limit...3mH 10 150k, 0.5W 2.2, 2W MOV 25318 14563 15016 00126-10R0 00127-1503 25896 03040
PE
R1, R2 R3... |
| Description |
ENMods Component Power Front End System for EN Compliance
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT01; No. of Contacts:12; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight
LED 3MM RA SUPER RED DIFF SMD
ENMods Component Power Front End System for EN Compliance ENMods组件电源前端系统中文合格
IC, PLD, FPGA, TQFP, ISPLSI, 1016E-80, 44 PIN
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| File Size |
344.38K /
12 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
IRFW510A IRFI510ATU IRFW510ATM IRFI510A
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| OCR Text |
...510A
BVDSS = 100 V RDS(on) = 0.4 ID = 5.6 A
D2-PAK
2
I2-PAK
1 1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
S...3mH, I AS=5.6A, VDD=25V, RG=27 , Starting T J =25oC o 3 _ _ _ O ISD < 5.6A, di/dt < 250A/ s, V DD < ... |
| Description |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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| File Size |
251.92K /
7 Page |
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IRF[International Rectifier]
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| Part No. |
JANS2N7237 IRFM8240 JANTX2N7237 JANTXV2N7237 IRFM9240
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| OCR Text |
...- -- -- -- 6.8 -- -- 0.51 0.52 -4.0 -- -25 -250 -100 100 60 15 38 35 85 85 65 -- V V/C V S( ) A
Test Conditions
VGS = 0V, I D = -1.0m...3mH Peak IL = -11A, VGS = -10V
ISD -11A, di/dt -150A/s,
VDD -200V, TJ 150C
Pulse width ... |
| Description |
POWER MOSFET THRU-HOLE (TO-254AA)
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
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| File Size |
186.77K /
7 Page |
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SEMELAB LTD
Seme LAB
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| Part No. |
IRF9230 IRF9230-JQR-B
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| OCR Text |
...0.420)
26.67 (1.050) max.
4.09 (0.161) 3.84 (0.151) dia. 2 plcs.
2
-200V -6.5A 0.8
* SIMPLE DRIVE REQUIREMENTS * SCREENING O...3mH , RG = 25 , Peak IL = -6.5A , Starting TJ = 25C 3) @ ISD -6.5A , di/dt -100A/s , VDD BVDSS , ... |
| Description |
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3
P-CHANNEL POWER MOSFET
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| File Size |
21.28K /
2 Page |
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it Online |
Download Datasheet |
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Price and Availability
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