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D5263BRU LTC3890 DE05034 527254MA FR2YSMA 175C100B FN4882 OPM2007
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  35.8a Datasheet PDF File

For 35.8a Found Datasheets File :: 7110    Search Time::1.234ms    
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    SANYO
Part No. CPH5818
OCR Text ...citance crss v ds =--6v, f=1mhz 35 pf turn-on delay time t d (on) see specified test circuit 7.5 ns rise time t r see specified test circuit...8a r l =12.5 w v dd = --10v v out cph5818 v in 0v --10v v in duty 10% 50 w 100 w 10 w --5v t rr 100...
Description Pch SBD

File Size 42.65K  /  5 Page

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    RHRP860 RHRP840

Fairchild Semiconductor
Part No. RHRP860 RHRP840
OCR Text ...10 56 25 MAX 2.1 1.7 100 500 30 35 2 MIN RHRP860 TYP 18 10 56 25 MAX 2.1 1.7 100 500 30 35 2 UNITS V V A A A A ns ns ns ns nC pF oC/W Typical Performance Curves 40 1000 175oC IR , REVERSE CURRENT (A) IF , FORWARD CURRENT (A) 100 10 ...
Description 8A, 400V - 600V Hyperfast Diodes

File Size 362.05K  /  5 Page

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    FTD8004

Sanyo Semicon Device
Part No. FTD8004
OCR Text ...0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS -- V 50 IT07082 35 RDS(...8A 6A 4A Ta=25C 30 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 IT07084 25 20 15 =3.1 VG...
Description Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 38.04K  /  4 Page

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    FTD8002

Sanyo Semicon Device
Part No. FTD8002
OCR Text ...0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 ID -- VDS 3.0 V 2.5 V 8 7 6 5 4 3 ID -- VGS VDS=10V Drain Current, ID -- A 4.0 V ...8A 6A 4A 30 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 IT07072 25 20 15 A I D=4 A, I...
Description Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device

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    SGS Thomson Microelectronics
Part No. STU8NC90Z STU8NC90ZI
OCR Text ... d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 m...
Description N-CHANNEL 900V 1.1 OHM 7.6A MAX220 / I-MAX220 ZENER-PROTECTED POWERMESH III MOSFET

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    FMV08N50E

Fuji Electric
Part No. FMV08N50E
OCR Text ... cc =250v i d =7.5a v gs =10v - 35 53 nc gate-source charge q gs - 9.0 14 gate-drain charge q gd - 10 15 avalanche capability i av l=3.93mh, tch =25c 7.5 - - a diode forward on-voltage v sd i f =7.5a, v gs =0v, t ch =25c - 0.90 1.35 v reve...
Description N-CHANNEL SILICON POWER MOSFET

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    International Rectifier, Corp.
Part No. IRFR13N20DTRR
OCR Text ...everse transfer capacitance CCC 35 CCC pf ? = 1.0mhz c oss output capacitance CCC 990 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss outpu...8a, v gs = 0v ? t rr reverse recovery time CCC 140 210 ns t j = 25c, i f = 7.8a q rr reverse rec...
Description TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|3A条(丁)|52AA

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    FW231A FW231A-TL-E

Sanyo Semicon Device
Part No. FW231A FW231A-TL-E
OCR Text ...0.1 0 1 2 3 6 5 4 8 7 0.4 0.3 0.35 0.15 0.2 0.25 it05892 0 0.2 0.4 0.8 0.6 1.0 1.2 1.4 1.6 1.8 it05893 v gs =1.5v 2.0v 2.5v 3.0v 4.5v ta=75 ...8a i d =4a i d =8a, v gs =4.0v i d =4a, v gs =2.5v 0.01 0.1 1.0 10 3 5 7 2 5 3 2 7 3 5 7 2 0.4 0.5 0...
Description N-Channel Silicon MOSFET General-Purpose Switching Device
General-Purpose Switching Device Applications

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    Microsemi, Corp.
ADPOW[Advanced Power Technology]
Part No. APT1001R6SFLL APT1001R6BFLL APT1001R6BFLLG
OCR Text ... UNIT pF 1320 230 42 55 7 35 18 18 32 19 210 40 450 50 MIN TYP MAX Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay T...8A) 5 dv/ t rr Q rr IRRM Reverse Recovery Time (IS = -8A, di/dt = 100A/s) Reverse Recovery...
Description 8 A, 1000 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
POWER MOS 7 R FREDFET

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    Semtech
Part No. SC284
OCR Text ... 0.4% 0.6% 0.8% 1.0% -40 -15 10 35 60 85 ambient temperature (c) variation i out = 0a uvlo hysteresis variation -5% -4% -3% -2% -1% 0% 1% 2%...8a typical waveforms circuit conditions: c in = 0uf/6.3v; c out = 22uf/6.3v, l= 2.2uh (toko: ...
Description 1.8A Synchronous Step-Down Regulator

File Size 1,851.26K  /  20 Page

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