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  30.009 Datasheet PDF File

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    FLL21E004ME

Eudyna Devices Inc
Part No. FLL21E004ME
OCR Text ...7GHz 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 6 8 10 12 14 16 18 20 22 24 26 Input Pow er [dBm ] Pout Drain Efficiency ...009 30.2 0.580 -30.8 +50j 0.3 0.938 -128.8 13.004 98.7 0.010 19.1 0.566 -40.1 +100j 0.4 0.932 -141.4...
Description High Voltage - High Power GaAs FET

File Size 248.36K  /  6 Page

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    SUM60N04-12LT

Vishay Siliconix
Part No. SUM60N04-12LT
OCR Text ... 0 0 8 16 24 32 40 0 0 15 30 45 60 75 VDS - Drain-to-Source Voltage (V) www.vishay.com Qg - Total Gate Charge (nC) Document Number: 71620 S-03830--Rev. A, 28-May-01 4 SUM60N04-12LT New Product TYPICAL CHARACTERISTICS (25...
Description Temperature Sensing MOSFET,N-Channel 40-V (D-S)
Temperature Sensing MOSFET, N-Channel 40-V (D-S)
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????)

File Size 53.93K  /  8 Page

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    JRC-27FB012H JRC-27FB012M JRC-27F JRC-27F012H JRC-27F012M JRC-27F012S

List of Unclassifed Manufacturers
ETC
Part No. JRC-27FB012H JRC-27FB012M JRC-27F JRC-27F012H JRC-27F012M JRC-27F012S
OCR Text ...0.3 0.5 0.6 0.9 1.2 1.5 2.4 4.8 30 90 130 280 450 625 1600 4000 20 Allow Voltage VDC 4.5 8.0 10.0 14.5 18.5 22.0 35.5 56.0 20 Allow Voltage ...009-S 012-S 015-S 024-S 3 5 6 9 12 15 24 2.25 3.75 4.50 6.80 9.00 11.3 18.0 0.3 0.5 0.6 0.9 1.2 1.5 ...
Description SUBMINIATURE DIP RELAY

File Size 108.81K  /  3 Page

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    NE6501077

NEC[NEC]
ETC
Part No. NE6501077
OCR Text ...V, Vgs = 0 V Vds = 2.5 V, Ids = 30 mA Vds = 2.5 V, Ids = 2 A Channel to Case PERFORMANCE SPECIFICATIONS (TA = 25 C) CHARACTERISTIC Outpu...009 0.009 0.010 0.010 0.010 0.011 0.011 0.011 0.012 0.013 0.013 0.015 0.015 0.016 0.016 0.017 0.018 ...
Description 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 36.45K  /  6 Page

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STS11NF30L
OCR Text ... STS11NF30L s s s s s V DSS 30 V R DS(on) < 0.012 ID 11 A TYPICAL RDS(on) = 0.014 @ 5V TYPICAL Qg = 19 nC @ 4.5V OPTIMAL RDS(...009 0.014 0.012 0.0185 Typ. Max. Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC...
Description N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

File Size 44.00K  /  6 Page

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    意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STS11NF3LL
OCR Text ...PE STS11NF3LL s s s s V DSS 30 V R DS(on) < 0.011 ID 11 A TYPICAL RDS(on) = 0.011 @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5...009 0.011 0.011 0.013 Typ. Max. Unit V A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC ...
Description N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET

File Size 43.92K  /  6 Page

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    CY7C008-15AC CY7C008-20AC CY7C008-12AC CY7C019-20AC CY7C009-12AC CY7C009-15AC CY7C009-20AC CY7C009-20AI CY7C009 CY7C018

CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
Part No. CY7C008-15AC CY7C008-20AC CY7C008-12AC CY7C019-20AC CY7C009-12AC CY7C009-15AC CY7C009-20AC CY7C009-20AI CY7C009 CY7C018 CY7C019 CY7C019-12AC CY7C008 CY7C019-20AI CY7C018-12AC CY7C018-15AC CY7C018-20AC CY7C019-15AC
OCR Text ...9 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 NC NC A7R A8R A9R A10R A11R A12R A13R A14R A1...009 CY7C018/019 Pin Configurations (continued) BUSYR 100-Pin TQFP (Top View) BUSYL GND INTL GN...
Description Memory : Dual-Ports
64K/128K x 8/9 Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 20 ns, PQFP100
64K/128K x 8/9 Dual-Port Static RAM 128K X 9 DUAL-PORT SRAM, 15 ns, PQFP100
64K/128K x 8/9 Dual-Port Static RAM 128K X 8 DUAL-PORT SRAM, 15 ns, PQFP100
64K/128K x 8/9 Dual-Port Static RAM 64K X 9 DUAL-PORT SRAM, 15 ns, PQFP100

File Size 250.89K  /  19 Page

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    NE5510279A-T1 NE5510279A

NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
Part No. NE5510279A-T1 NE5510279A
OCR Text ... mA POUT IOP f = 1.8 GHz, PIN = 30 dBm, VDS =6.0 V,IDQ = 400 mA f = 1.8 GHz, PIN = 25 dBm VDS = 3.5 V,VGS = 2.5 V f = 1.8 GHz, PIN = 25 dBm ...009 0.007 0.007 0.007 0.006 0.008 0.009 0.007 0.009 0.011 0.013 0.013 0.014 S12 ANG 14.6 3.4 -1.8...
Description 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

File Size 38.62K  /  5 Page

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    Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Part No. SUD70N03-06P
OCR Text 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)b 70 70 rDS(on) (W) 0.006 @ VGS = 10 V 0.009 @ VGS = 4.5 V D TrenchFETr Power MOSFET D High Current D 100% Rg Tested APPLICATIONS D DC/DC Converters - Opti...
Description N-Channel 30-V (D-S) 175C MOSFET N沟道30 V的(副)175荤MOSFET
N-Channel 30-V (D-S) 175C MOSFET

File Size 64.13K  /  4 Page

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