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Alpha & Omega Semicondu...
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| Part No. |
AO4629
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| OCR Text |
...g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view g1 d1 s1 g2 d2 s2 symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl -30 drain-source voltage 30 v units parameter 1.3 30 10 5 2 2 1.3 ... |
| Description |
30V Complementary MOSFET
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| File Size |
848.69K /
9 Page |
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it Online |
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Alpha & Omega Semicondu...
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| Part No. |
AO4498
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| OCR Text |
... a d power dissipation b p d w 3.1 a i d 18 14 maximum units parameter absolute maximum ratings t a =25c unless otherwise noted the ao4498 combines advanced trench mosfet technology with a low resistance package to provide extremely low r... |
| Description |
30V N-Channel MOSFET
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| File Size |
186.20K /
6 Page |
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it Online |
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Alpha & Omega Semicondu...
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| Part No. |
AO4496 AO4496-12
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| OCR Text |
...e range t a =70c maximum 10 7.5 3.1 repetitive avalanche energy l=0.1mh g mj 50 a 17 14 d d d s s s g g s alpha & omega semiconductor, ltd. www.aosmd.com
ao4496 symbol min typ max units bv dss 30 v 1 t j = 55c 5 i gss 100 na v gs(th) 1... |
| Description |
30V N-Channel MOSFET
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| File Size |
290.30K /
5 Page |
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it Online |
Download Datasheet
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Alpha & Omega Semicondu...
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| Part No. |
AO4494
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| OCR Text |
... max 28 40 59 75 r q jl 16 24 w 3.1 maximum junction-to-lead steady-state c/w steady-state c/w maximum junction-to-ambient a d units maximum junction-to-ambient a t c =25c t c =70c power dissipation b p d a i d 18 14 mj avalanche curren... |
| Description |
30V N-Channel MOSFET
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| File Size |
187.52K /
6 Page |
View
it Online |
Download Datasheet
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Alpha & Omega Semicondu...
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| Part No. |
AO4492
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| OCR Text |
...150 c thermal characteristics w 3.1 units parameter typ max c/w r q ja 31 59 40 maximum junction-to-ambient a v 20 gate-source voltage mj avalanche current c 20 a 20 a i d 14 11.4 100 t a =25c t a =70c power dissipation b p d avalanche e... |
| Description |
30V N-Channel MOSFET
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| File Size |
501.81K /
6 Page |
View
it Online |
Download Datasheet
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