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				GSI Technology, Inc.
Part No.	GS815118
OCR Text	...1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 A[1:0] A[1:0] A[1:0] ...version. Rev: 1.01 11/2000 8/32 (c) 2000, Giga Semiconductor, Inc. Specifications cited ...
Description	16MbM x 18Bit) Sync Burst SRAM(16M位（1M x 18同步静态RAM（带2位脉冲地址计数器）) 16Mb1M x 18Bit) Sync Burst SRAM(16M位（1M x 18同步静态RAM（带2位脉冲地址计数器）) 16Mb的（100万x 18位）同步突发静态存储器1,600位（100万18位）同步静态随机存储器（带2位脉冲地址计数器）
File Size	588.60K / 32 Page	View it Online	Download Datasheet

				GSI Technology, Inc.
Part No.	GS88032T--11.5I GS88036T--11.5I GS88036T-100I GS88036T-11I GS88032T-66I GS88018T-11.5 GS88018T-66I GS88018T-100 GS88018T-100I GS88032T-80 GS88032T-80I GS88018GT-11.5I GS88018GT-11.5IT GS88036T-11 GS88018T-11I GS88018T-80 GS88018T-11.5I GS88018T-11.5T GS88032T-100I
OCR Text	...[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 1st address 2nd address ...Version, E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F ...
Description	512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 18 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
File Size	1,035.08K / 25 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS816018
OCR Text	...1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01...
Description	16MbM x 18Bit）Sync Burst SRAM(16M位（1M x 18位）同步静态RAM(位脉冲地址计数)
File Size	522.43K / 26 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS88018
OCR Text	...[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 1st address 2nd address ...Version, E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F ...
Description	8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
File Size	381.10K / 25 Page	View it Online	Download Datasheet

				http:// GSI Technology, Inc.
Part No.	GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I GS880E18T-11.5T GS880E36T-11.5I GS880E18T-11.5I GS880E18T-66I GS880E36T-66I GS880E36T-11I GS880E36T-100 GS880E36T-100I GS880E18T-100 GS880E18T-11I GS880E18T-100I GS880E32T-80 GS880E32T-80I
OCR Text	...[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 1st address 2nd address ...Version, E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1. 3. W = T (True) and F...
Description	512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
File Size	853.88K / 25 Page	View it Online	Download Datasheet

				GSI Technology, Inc. Molex, Inc.
Part No.	GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I GS880F18T-14 GS880F18T-12I GS880F18T-11.5I GS880F18T-11I
OCR Text	...[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 1st address 2nd address ...version. Rev: 1.06 9/2000 6/22 (c) 2000, Giga Semiconductor, Inc. Specifications cited a...
Description	8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）) 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
File Size	314.19K / 22 Page	View it Online	Download Datasheet

				GSI Technology
Part No.	GS88418
OCR Text	...[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 1st address 2nd address ...version. Rev: 1.04 12/2000 7/25 (c) 2000, Giga Semiconductor, Inc. Specifications cited ...
Description	8Mb12K x 18Bit) S/DCD Synchronous Burst SRAM(8M位（512K x 18位）可选单/双循环取消同步静态RAM(位脉冲地址计数)
File Size	801.27K / 25 Page	View it Online	Download Datasheet

				Winsem Technology
Part No.	WTBV56DMR
OCR Text	...-2010 b-2011 c-2012 2nd (month code) a-jan, b-feb, c-mar, d-apr, e-may, f-jun, g-jul, h-aug, i-sep, j-oct, k-n ov, l-dec...version a12 ordering information type no marking package code ...
Description	POWER TRANSISTOR
File Size	384.85K / 5 Page	View it Online	Download Datasheet

				ETC Electronic Theatre Controls, Inc. http:// GSI Technology
Part No.	GS816032T-166 GS816036T-133 GS816036T-150 GS816036T-133I GS816036T-166 GS816036T-150I GS816036T-166I GS816036T-250 GS816036T-200 GS816036T-200I GS816018T-150I GS816018T-250 GS816032T-150 GS816032T-250I GS816032T-166I GS816032T-250 GS816018T-200I GS816018T-133 GS816032T-225I GS816032T-133I GS816018T-133I GS816036T-225I GS816018T-166 GS816018T-225I GS816032T-150I
OCR Text	...1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 01 10 11 00 10 11 00 01 11 00 01 10 A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10...
Description	Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 50V; Case Size: 8x11.5 mm; Packaging: Bulk 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M×1812k×3212k×36 18M位同步突发静态存储器 Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x11 mm; Packaging: Bulk Quad 2-input positive-NAND buffers with open collector outputs 14-PDIP 0 to 70 Quad 2-input positive-NAND buffers with open collector outputs 14-SOIC 0 to 70 Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 10x16 mm; Packaging: Bulk Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 2200uF; Voltage: 25V; Case Size: 18x35.5 mm; Packaging: Bulk 1M x 18/ 512K x 32/ 512K x 36 18Mb Sync Burst SRAMs Aluminum Electrolytic Radial Leaded Bi-Polar Capacitor; Capacitance: 100uF; Voltage: 50V; Case Size: 10x20 mm; Packaging: Bulk
File Size	814.54K / 28 Page	View it Online	Download Datasheet

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