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  29.40mm Datasheet PDF File

For 29.40mm Found Datasheets File :: 647    Search Time::0.766ms    
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    SPD30N03L SPU30N03L

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SPD30N03L SPU30N03L
OCR Text ...5 V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Semiconductor Group 8 SPD30N03L Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munche...
Description N-Channel SIPMOS Power Transistor

File Size 84.85K  /  9 Page

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    SPD30N03S2L-07

Infineon Technologies A...
Infineon Technologies AG
Part No. SPD30N03S2L-07
OCR Text ...0A VGS =0V, VDS =25V, f=1MHz 29 - S 2530 pF 990 270 10 26 77.5 59 ns VDD =15V, VGS =10V, ID =15A, RG =3.6 - 6 18 51 3.1 8 27 68 - nC V(plateau) VDD =24V, ID =30A V Reverse Diode Inverse diode continuous for...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.7mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 259.62K  /  8 Page

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    SPD30N03S2L-10

Infineon Technologies AG
Part No. SPD30N03S2L-10
OCR Text ... IS TC=25C - 0.9 31 29 30 120 1.2 39 37 A V ns nC Page 3 2003-04-24 SPD30N03S2L-10 1 Power dissipation Ptot = f (TC) parameter: VGS 4 V 110 SPD30N03S2L-10 2 Drain current ID = f (T C) parameter: VGS 10 V ...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL

File Size 255.84K  /  8 Page

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    SPD30N03S2L-20

Infineon Technologies AG
Part No. SPD30N03S2L-20
OCR Text ...V V(BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2003-04-24 SPD30N03S2L-20 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) I...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 20mOhm, 30A, LL
OptiMOS Power-Transistor

File Size 261.11K  /  8 Page

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    SPD30N06S2-23 N06S2-23

Infineon Technologies AG
Part No. SPD30N06S2-23 N06S2-23
OCR Text ...itions min. 15 - Values typ. 29 940 244 66 10 max. - Unit S 1250 pF 325 100 15 ns Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau ...
Description Low Voltage MOSFETs - DPAK; 30 A; 55V; NL; 23 mOhm
OptiMOS Power-Transistor

File Size 260.56K  /  8 Page

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    SPD30N08S2-22

Infineon Technologies AG
Part No. SPD30N08S2-22
OCR Text ... Values typ. 34 1466 320 125 10 29 36 28 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 17 - S 1950 pF 425 188 15 44 54 42 ns VDD =40V, VGS =10V, ID =30A, RG ...
Description OptiMOS Power-Transistor
Low Voltage MOSFETs - DPAK; 30 A; 75V; NL; 21,5 mOhm

File Size 264.75K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPU30N03S2L-10
OCR Text ... V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 30 A , VDD = 25 V, RGS = 25 V 12 10 0,2 VDS max 0,8 VDS max 8 6 4 2 0 0 5 10 15 ...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, IPAK, RDSon = 10.0mOhm, 30A, LL
OptiMOS Power-Transistor

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    ISL59445IR ISL59424IR ISL59424IR-T13 ISL59424IR-T7 ISL59424IRZ ISL59424IRZ-T13 ISL59424IRZ-T7 ISL59424 ISL59445IR-T13 IS

Intersil Corporation
Part No. ISL59445IR ISL59424IR ISL59424IR-T13 ISL59424IR-T7 ISL59424IRZ ISL59424IRZ-T13 ISL59424IRZ-T7 ISL59424 ISL59445IR-T13 ISL59445IR-T7
OCR Text ...ISL59445 (32-PIN QFN) TOP VIEW 29 IN0B 27 IN0C 30 NIC 22 NIC 21 NIC 28 NIC 20 HIZ IN0B 1 NIC 2 A=1 IN0C 3 GNDB 4 A=1 IN1A 5 GNDC 6 IN1B 7 NIC 8 IN1C 9 THERMAL PAD NIC 10 NIC 11 A=1 19 ENABLE 18 OUTA 17 V+ 16 OUTB 15 V1...
Description    1GHz Triple Multiplexing Amplifiers
From old datasheet system

File Size 775.06K  /  13 Page

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    1.5KE180 1.5KE33A 15KE 1.5KE8.2 1.5KE51 1.5KE18A 1.5KE68A 1.5KE43A 1.5KE91A 1.5KE350A 1.5KE24A 1.5KE12 1.5KE33 1.5KE82A

EIC discrete Semiconduc...
Electronics Industry Public Company Limited
EIC[EIC discrete Semiconductors]
ST Microelectronics
Part No. 1.5KE180 1.5KE33A 15KE 1.5KE8.2 1.5KE51 1.5KE18A 1.5KE68A 1.5KE43A 1.5KE91A 1.5KE350A 1.5KE24A 1.5KE12 1.5KE33 1.5KE82A 1.5KE130A 1.5KE7.5 1.5KE6.8 1.5KE62 1.5KE200A 1.5KE91 1.5KE10 1.5KE100 1.5KE100A 1.5KE10A 1.5KE11 1.5KE110 1.5KE110A 1.5KE11A 1.5KE120 1.5KE120A 1.5KE12A 1.5KE13 1.5KE130 1.5KE13A 1.5KE15 1.5KE150 1.5KE150A 1.5KE15A 1.5KE16 1.5KE160 1.5KE160A 1.5KE16A 1.5KE170 1.5KE170A 1.5KE18 1.5KE180A 1.5KE20 1.5KE200 1.5KE20A 1.5KE22 1.5KE220 1.5KE220A 1.5KE22A 1.5KE24 1.5KE250 1.5KE250A 1.5KE27 1.5KE27A 1.5KE30 1.5KE300 1.5KE300A 1.5KE30A 1.5KE350 1.5KE36 1.5KE36A 1.5KE39 1.5KE39A 1.5KE400 1.5KE400A 1.5KE43 1.5KE440 1.5KE440A 1.5KE47 1.5KE47A 1.5KE51A 1.5KE56 1.5KE56A 1.5KE6.8A 1.5KE62A 1.5KE68 1.5KE7.5A 1.5KE75 1.5KE75A 1.5KE8.2A 1.5KE82 1.5KE9.1 1.5KE9.1A
OCR Text ...9 21.6 22.8 24.3 25.7 27.0 28.5 29.7 31.4 32.4 34.2 35.1 37.1 38.7 40.9 42.3 44.7 45.9 48.5 50.4 53.2 55.8 Max. 7.48 7.14 8.25 7.88 9.02 8.61 10.0 9.55 11.0 10.5 12.1 11.6 13.2 12.6 14.3 13.7 16.5 15.8 17.6 16.8 19.8 18.9 22.0 21.0 24.2 23....
Description TRANSIENT VOLTAGE SUPPRESSOR 瞬态电压抑制器
PT 2,5/10-7,5-H 瞬态电压抑制器
Dual-Bit Dual-Supply Bus Transceiver with Configurable Voltage Translation and 3-State Outputs 8-SM8 -40 to 85 瞬态电压抑制器
TRANSILS

File Size 27.32K  /  4 Page

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    Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-C2289 BCR142W
OCR Text ...00 nA A 227 70 V 0.3 1.2 2.5 29 0.52 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.5 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage 1) IC = 10 mA,...
Description NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system
NPN Silicon Digital Transistor (Switching circuit inverter interface circuit driver circuit)

File Size 34.96K  /  4 Page

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For 29.40mm Found Datasheets File :: 647    Search Time::0.766ms    
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