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Advanced Power Electronics
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| Part No. |
AP09N70P-A-HF-3
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| OCR Text |
...19 - ns t r rise time i d =9a - 21 - ns t d(off) turn-off delay time r g =10w , v gs =10v - 56 - ns t f fal...3 t j =25c, i s =9a, v gs =0v - - 1.5 v o j dd g as 3. pulse test - pulse... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
133.92K /
5 Page |
View
it Online |
Download Datasheet
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MICROWAVE TECHNOLOGY INC
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| Part No. |
MWT-H7-3 MWT-H7-8 MWT-H7-13 MWT-H7-6 MWT-H7-2
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| OCR Text |
...ice. ordering information 21.5 dbm power output at 12 ghz excellent for high gain and medium power applications 0.3 micron refractory metal/gold gate 250 micron gate width choice of chip and two package type... |
| Description |
KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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| File Size |
104.99K /
2 Page |
View
it Online |
Download Datasheet
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Advanced Power Electronics
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| Part No. |
AP4800GYT-HF-3
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| OCR Text |
... v gs 10% 90% 0 2 4 6 8 10 0481 21 62 0 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =15v 0 200 400 600 80...3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: pmpak ? 3x3 1. a... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
75.42K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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