| |
|
 |
Infineon
|
| Part No. |
G15N60
|
| OCR Text |
...
IC, COLLECTOR CURRENT
VGE=20v 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
35A 30A 25A 20A 15A 10A 5A 0A 0V
35A 30A 25A 20A 15A...0
www.DataSheet4U.com
td(on) tr
10ns 5A
10A
15A
20A
25A
30A
20
40
6... |
| Description |
Fast IGBT
|
| File Size |
499.21K /
11 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| Part No. |
FSYA150R4 FSYA150D FSYA150D1 FSYA150D3 FSYA150R FSYA150R1 FSYA150R3
|
| OCR Text |
...5oC MIN 100 1.5 0.5 VGS = 0V to 20v VGS = 0V to 12V VGS = 0V to 2V VDD = 50V, ID = 39A ID = 39A, VDS = 15V VDS = 25V, VGS = 0V, f = 1MHz TYP 0.033 115 23 64 8 3250 1060 370 MAX 5.0 4.0 25 250 100 200 2.34 0.055 0.086 40 130 75 35 200 130 5.... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 39 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
| File Size |
57.05K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Niko
|
| Part No. |
P0903BDG
|
| OCR Text |
... VGS, ID = 250A VDS = 0V, VGS = 20v VDS = 20v, VGS = 0V VDS = 20v, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 nA A V LIMITS UNIT MIN TYP MAX...0.9 70 200 0.043
50 150 1.3
A V nS A C
Pulse test : Pulse Width 300 sec, Duty Cycle 2 . I... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
314.75K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Niko
|
| Part No. |
P0903BI
|
| OCR Text |
... VGS, ID = 250A VDS = 0V, VGS = 20v VDS = 20v, VGS = 0V VDS = 20v, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 nA A V LIMITS UNIT MIN TYP MAX...0.9 70 200 0.043
50 150 1.3
A V nS A C
Pulse test : Pulse Width 300 sec, Duty Cycle 2H. I... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
160.01K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Niko
|
| Part No. |
P0903BSG
|
| OCR Text |
... VGS, ID = 250A VDS = 0V, VGS = 20v VDS = 20v, VGS = 0V VDS = 20v, VGS = 0V, TC = 125 C 25 1 1.6 3 250 25 250 V nA A LIMITS UNIT MIN TYP MAX...0.9 70 200 0.043
50 150 1.3
A V nS A C
Pulse test : Pulse Width 300 sec, Duty Cycle 2. In... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
384.08K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FS50UM-06
|
| OCR Text |
...itions ID = 1mA, VGS = 0V VGS = 20v, VDS = 0V VDS = 60V, VGS = 0V ID = 2mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS ...0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 17 0.43 32 2300 570 280 35 95 95 80 1.0 -- 65 Max. -- 0.1 0... |
| Description |
BK Precision Triple Output DC Power Supply, Output Voltage: Variable 0-30 VDC, Fixed 12 VDC ( 5 %), Fixed 5 VDC ( 5 %), Output Current: 0-5 A, 0-500 mA, 0-500 mA, Metering Display: 2 Digital 3 Digit LCD, Ammeter Range: 0-.999 A 高速开关使
HIGH-SPEED SWITCHING USE
|
| File Size |
39.36K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| Part No. |
FS50SM-3
|
| OCR Text |
...itions ID = 1mA, VGS = 0V VGS = 20v, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 10V ID = 25A, VDS...0 -- -- -- -- -- -- -- Typ. -- -- -- 3.0 24 0.600 55 6540 860 360 95 155 380 180 1.0 -- 130 Max. -- ... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
| File Size |
45.24K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
